Near-Infrared Plasmonic Planar Films: Advancements in Aluminum-Doped Zinc Oxide for Sensing and Telecommunications Applications

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Sajeesh Vadakkedath Gopi, Sumesh Karuvanveettil, Irulappan Packia Selvam and Sankara Narayanan Potty*, 
{"title":"Near-Infrared Plasmonic Planar Films: Advancements in Aluminum-Doped Zinc Oxide for Sensing and Telecommunications Applications","authors":"Sajeesh Vadakkedath Gopi,&nbsp;Sumesh Karuvanveettil,&nbsp;Irulappan Packia Selvam and Sankara Narayanan Potty*,&nbsp;","doi":"10.1021/acsaelm.5c0001410.1021/acsaelm.5c00014","DOIUrl":null,"url":null,"abstract":"<p >Heavily doped metal oxides are considered to be efficient plasmonic materials for near infrared (NIR) applications due to their lower carrier density compared to noble metals such as gold and silver, which are traditionally used in the visible region. However, the development of real-world low-loss plasmonic materials for applications well below the telecommunication wavelength in near-infrared remained a challenge. In this work, we demonstrate the tunability of carrier concentration and the tunability of the negative dielectric constant of planar aluminum-doped zinc oxide (AZO) films coated on low-cost microscopic glass slides via precise engineering of material properties and film thickness, to perform as suitable plasmonic material in the near-IR-wavelength region. We evaluated the low-loss nature of the films and then showed the surface plasmon resonance (SPR) of these films in near IR for wavelengths &gt;1300 nm using Kretschmann-type prism configuration. We also portrayed the sensing behavior of these films at different refractive index media to ensure their applicability in device applications. This demonstration would be a breakthrough in the history of near-IR surface plasmon phenomena in the context of portable and point-of-care healthcare devices, where the film developed on glass substrates can be used as a disposable sensing chip with suitable functionalization.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2557–2563 2557–2563"},"PeriodicalIF":4.3000,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.5c00014","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Heavily doped metal oxides are considered to be efficient plasmonic materials for near infrared (NIR) applications due to their lower carrier density compared to noble metals such as gold and silver, which are traditionally used in the visible region. However, the development of real-world low-loss plasmonic materials for applications well below the telecommunication wavelength in near-infrared remained a challenge. In this work, we demonstrate the tunability of carrier concentration and the tunability of the negative dielectric constant of planar aluminum-doped zinc oxide (AZO) films coated on low-cost microscopic glass slides via precise engineering of material properties and film thickness, to perform as suitable plasmonic material in the near-IR-wavelength region. We evaluated the low-loss nature of the films and then showed the surface plasmon resonance (SPR) of these films in near IR for wavelengths >1300 nm using Kretschmann-type prism configuration. We also portrayed the sensing behavior of these films at different refractive index media to ensure their applicability in device applications. This demonstration would be a breakthrough in the history of near-IR surface plasmon phenomena in the context of portable and point-of-care healthcare devices, where the film developed on glass substrates can be used as a disposable sensing chip with suitable functionalization.

Abstract Image

近红外等离子体平面薄膜:用于传感和电信应用的掺铝氧化锌的进展
重掺杂金属氧化物被认为是近红外(NIR)应用的高效等离子体材料,因为与传统上用于可见光区域的贵金属(如金和银)相比,它们的载流子密度较低。然而,实际应用的低损耗等离子体材料的发展远低于电信波长在近红外仍然是一个挑战。在这项工作中,我们通过对材料性质和薄膜厚度的精确工程,证明了在低成本显微玻璃载玻片上涂覆的平面掺铝氧化锌(AZO)薄膜的载流子浓度和负介电常数的可调性,从而在近红外波长区域作为合适的等离子体材料。我们评估了薄膜的低损耗特性,然后使用kretschmann型棱镜结构在近红外波段显示了这些薄膜的表面等离子体共振(SPR),波长为1,300 nm。我们还描绘了这些薄膜在不同折射率介质中的传感行为,以确保它们在器件应用中的适用性。该演示将是便携式和即时医疗保健设备中近红外表面等离子体现象历史上的一个突破,其中在玻璃基板上开发的薄膜可以用作具有适当功能化的一次性传感芯片。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信