Heavily Doped Monolayer MoS2 by Sub-nm Thick Assembly of Dopant Molecules

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Puneet Jain, Shotaro Yotsuya, Terry Y.T. Hung, Kosuke Nagashio and Daisuke Kiriya*, 
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引用次数: 0

Abstract

Molybdenum disulfide (MoS2) is a widely studied material in the family of transition metal dichalcogenides (TMDCs) and has potential applications in electronics, optoelectronics, and energy harvesting due to its high mobility, excellent gate controllability, high ON/OFF current ratio, low standby current, small dielectric constant, and good stability, etc. Doping is a very significant approach to manipulate the electronic and optical properties of 2D materials, because by doping, we can modulate the electronic structures and device performance of 2D materials. In the present work, we demonstrate molecule-based doping approach for a MoS2 monolayer (ML) with unusually few nanometers thick layered assembly formation of the molecular layer, even for single-to-several layered situations by the solution process. We have chosen an asymmetric molecule, triphenylphosphine (PPh3), as phosphorus in PPh3 has a lone pair of electrons, which shows heavy doping to MoS2 ML, via the assembly of PPh3 molecules, which is formed by the melting, evaporation, and movement of PPh3 droplets during the heating process. By the analyses using device arrays with changing channel length and width of the devices, it is found that the doping characteristics by PPh3 molecules are dependent on the geometry of the devices. For the well-wetting situation of the PPh3 melt on a wider, more than ∼20 μm width MoS2 channel, the PPh3 molecules would cover the surface and assemble on the surface of MoS2, with the thickness of a few molecular layers. Even though the PPh3 dopant molecular assembled layer is nm order of magnitude thick, PPh3 molecules still change MoS2 MLs to a degenerately doped state. The molecular layer is thin enough to form a clean and transparent layer on the MoS2 ML. The finding in this study is that it is possible to combine and stack with other materials for designing electronic configurations in TMDC devices to improve electronic and optoelectronic performances.

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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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