{"title":"Fast Photothermoelectric Response in CVD-Grown Two-Dimensional Bi2O2Se Nanoplates","authors":"Keyu Wen, Daolong Liu, Haoyu Zhai, Cong Wang, Libo Zhang, Wenshuai Gao, Xue Liu, Mingliang Tian, Shouguo Wang and Xuegang Chen*, ","doi":"10.1021/acsaelm.5c0000910.1021/acsaelm.5c00009","DOIUrl":null,"url":null,"abstract":"<p >As an emerging two-dimensional (2D) semiconductor material, layered Bi<sub>2</sub>O<sub>2</sub>Se exhibits tremendous potential applications in the field of optical devices due to its high electron mobility, exceptional optical response, and remarkable air stability. In this study, high-quality Bi<sub>2</sub>O<sub>2</sub>Se nanoplates were grown on a fluorophlogopite mica (f-mica) substrate via a chemical vapor deposition approach. A high-quality two-terminal Bi<sub>2</sub>O<sub>2</sub>Se device is fabricated by traditional electron beam lithography, which displays linear current–voltage characteristics. The Bi<sub>2</sub>O<sub>2</sub>Se device exhibits an ON/OFF ratio of 10<sup>4</sup> as well as n-type semiconductor characteristics. A maximum responsivity of 0.029 A W<sup>–1</sup> and a fast photoresponse time of 35–42 μs under 638 nm laser illumination are discovered. Spatially resolved scanning photocurrent microscopy is conducted, which indicates that the photothermoelectric effect should be the dominant contribution for the observed photocurrent in the Bi<sub>2</sub>O<sub>2</sub>Se device. This study paves the way for developing high-performance photoelectron devices based on Bi<sub>2</sub>O<sub>2</sub>Se materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2537–2545 2537–2545"},"PeriodicalIF":4.3000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.5c00009","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
As an emerging two-dimensional (2D) semiconductor material, layered Bi2O2Se exhibits tremendous potential applications in the field of optical devices due to its high electron mobility, exceptional optical response, and remarkable air stability. In this study, high-quality Bi2O2Se nanoplates were grown on a fluorophlogopite mica (f-mica) substrate via a chemical vapor deposition approach. A high-quality two-terminal Bi2O2Se device is fabricated by traditional electron beam lithography, which displays linear current–voltage characteristics. The Bi2O2Se device exhibits an ON/OFF ratio of 104 as well as n-type semiconductor characteristics. A maximum responsivity of 0.029 A W–1 and a fast photoresponse time of 35–42 μs under 638 nm laser illumination are discovered. Spatially resolved scanning photocurrent microscopy is conducted, which indicates that the photothermoelectric effect should be the dominant contribution for the observed photocurrent in the Bi2O2Se device. This study paves the way for developing high-performance photoelectron devices based on Bi2O2Se materials.
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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