Investigation of illumination effects on photovoltaic features of Al/p-Si Schottky diode with different amount of mixed PANI: Rubrene interface

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-23 DOI:10.1007/s10854-025-14558-9

S. Karadeniz, D. E. Yıldız, M. Yıldırım, S. Mirza, F. Durmaz, B. Barıs

{"title":"Investigation of illumination effects on photovoltaic features of Al/p-Si Schottky diode with different amount of mixed PANI: Rubrene interface","authors":"S. Karadeniz, D. E. Yıldız, M. Yıldırım, S. Mirza, F. Durmaz, B. Barıs","doi":"10.1007/s10854-025-14558-9","DOIUrl":null,"url":null,"abstract":"<div>In this study, Al/PANI: Rubrene/p-Si Schottky photodiodes were produced. To perform this process, different amounts of Rubrene were added to the PANI and used as an interfacial material in device. In order to evaluate the electrical properties of produced device, various photo-response measurements, were made in dark and at illumination intensities (from 20 to 100 mW/cm2 with 20 mW/cm2 intervals) depending on amount of additives. The measurement results were analyzed and some performance parameters such as ideality factor (n), barrier height (ΦB), saturation current (Io), and series resistance (Rs) were calculated. The highest photocurrent values were obtained between 4.46 × 10–2 A and 6.50 × 10–2 A depending on increasing light intensity for diode with a ratio of 1:0.5. Responsivity and sensitivity have been found to be 4.97 A/W and 10.44, respectively, at 100 mW/cm2. Maximum detectivity has found 6.25 × 1010 Jones at 20 mW/cm2 light intensity for device at 1:0.5 ratio. These measurements showed that all devices were sensitive to the light. In addition, the light sensitivity of diodes varies depending on the amount of mixing. As a result of data obtained, it was seen that devices demonstrated photovoltaic properties and were found to be usable for optoelectronic applications.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14558-9.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14558-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this study, Al/PANI: Rubrene/p-Si Schottky photodiodes were produced. To perform this process, different amounts of Rubrene were added to the PANI and used as an interfacial material in device. In order to evaluate the electrical properties of produced device, various photo-response measurements, were made in dark and at illumination intensities (from 20 to 100 mW/cm² with 20 mW/cm² intervals) depending on amount of additives. The measurement results were analyzed and some performance parameters such as ideality factor (n), barrier height (Φ_B), saturation current (I_o), and series resistance (R_s) were calculated. The highest photocurrent values were obtained between 4.46 × 10^–2 A and 6.50 × 10^–2 A depending on increasing light intensity for diode with a ratio of 1:0.5. Responsivity and sensitivity have been found to be 4.97 A/W and 10.44, respectively, at 100 mW/cm². Maximum detectivity has found 6.25 × 10¹⁰ Jones at 20 mW/cm² light intensity for device at 1:0.5 ratio. These measurements showed that all devices were sensitive to the light. In addition, the light sensitivity of diodes varies depending on the amount of mixing. As a result of data obtained, it was seen that devices demonstrated photovoltaic properties and were found to be usable for optoelectronic applications.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.