{"title":"Preparation and electrical properties of Al and Te co-doped BNT-BKT ceramics","authors":"Jinling Zeng, Zixuan Wang, Yingbang Yao","doi":"10.1007/s10854-025-14561-0","DOIUrl":null,"url":null,"abstract":"<div><p>0.8Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>(BNT)–0.2Bi<sub>0.5</sub>K<sub>0.5</sub>TiO<sub>3</sub>(BKT) ceramics co-doped with Al<sub>2</sub>O<sub>3</sub> and TeO<sub>2</sub> (BNT-BKT-<i>x</i>AT) were prepared using conventional solid-state-reaction method. X-ray diffraction (XRD) analysis of samples with doping concentrations <i>x</i> ≤ 0.10 confirmed a pure perovskite phase, with relative densities over 95%. The sample with <i>x</i> = 0.05 exhibited better dielectric, ferroelectric and piezoelectric performances, i.e., a dielectric constant of 4900 at 1 kHz, a coercive electric field (<i>E</i><sub><i>c</i></sub>) of 42.8 kV/cm, remanent polarization (<i>P</i><sub><i>r</i></sub>) of 31.8 µC/cm<sup>2</sup>, saturation polarization (<i>P</i><sub><i>s</i></sub>) of 45.8 µC/cm<sup>2</sup>, and a piezoelectric coefficient (<i>d</i><sub>33</sub>) of 160 pC/N. Increasing the doping concentration resulted in a rise in the phase transition temperature. Moreover, at a higher doping level (<i>x</i> = 0.16), the samples exhibited semiconducting behavior, i.e., a temperature-dependent electrical resistivity. These findings indicate that such Al/Te co-doped BNT-BNT ceramics, particularly with <i>x</i> = 0.05 and <i>x</i> = 0.16, are promising candidates for piezoelectric and temperature sensing applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14561-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
0.8Bi0.5Na0.5TiO3(BNT)–0.2Bi0.5K0.5TiO3(BKT) ceramics co-doped with Al2O3 and TeO2 (BNT-BKT-xAT) were prepared using conventional solid-state-reaction method. X-ray diffraction (XRD) analysis of samples with doping concentrations x ≤ 0.10 confirmed a pure perovskite phase, with relative densities over 95%. The sample with x = 0.05 exhibited better dielectric, ferroelectric and piezoelectric performances, i.e., a dielectric constant of 4900 at 1 kHz, a coercive electric field (Ec) of 42.8 kV/cm, remanent polarization (Pr) of 31.8 µC/cm2, saturation polarization (Ps) of 45.8 µC/cm2, and a piezoelectric coefficient (d33) of 160 pC/N. Increasing the doping concentration resulted in a rise in the phase transition temperature. Moreover, at a higher doping level (x = 0.16), the samples exhibited semiconducting behavior, i.e., a temperature-dependent electrical resistivity. These findings indicate that such Al/Te co-doped BNT-BNT ceramics, particularly with x = 0.05 and x = 0.16, are promising candidates for piezoelectric and temperature sensing applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.