Edge-induced selective etching of bilayer MoS₂ kirigami structures via a space-confined method.

IF 8 2区材料科学 Q1 CHEMISTRY, PHYSICAL

Nanoscale Horizons Pub Date : 2025-03-20 DOI:10.1039/d4nh00561a

Weijie Ma, Qing Zhang, Jie Zhu, Yang Guo, Yajing Sun, Lin Li, Dechao Geng

引用次数: 0

Abstract

The controllable preparation of edge arrangements, particularly the customization of zigzag edges on demand, remains elusive. Here, a selective etching strategy to directly regulate Mo-zigzag and S-zigzag edges of MoS₂ kirigami structures is proposed, paving the way for edge engineering of 2D materials and providing promising candidates for next-generation optoelectronics.

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通过空间限制法对双层 MoS2 kirigami 结构进行边缘诱导选择性蚀刻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanoscale Horizons Materials Science-General Materials Science

CiteScore

16.30

自引率

1.00%

发文量

141

期刊介绍： Nanoscale Horizons stands out as a premier journal for publishing exceptionally high-quality and innovative nanoscience and nanotechnology. The emphasis lies on original research that introduces a new concept or a novel perspective (a conceptual advance), prioritizing this over reporting technological improvements. Nevertheless, outstanding articles showcasing truly groundbreaking developments, including record-breaking performance, may also find a place in the journal. Published work must be of substantial general interest to our broad and diverse readership across the nanoscience and nanotechnology community.

Edge-induced selective etching of bilayer MoS2 kirigami structures via a space-confined method.

Abstract

Edge-induced selective etching of bilayer MoS₂ kirigami structures via a space-confined method.