Synergistic optimization strategy enhanced the energy storage performance of NaNbO3-based relaxation antiferroelectric ceramics

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hongjuan Wen, Xiusheng Wu, Naiji Zhou, Hanlv Li, Jufang Cao
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引用次数: 0

Abstract

Due to the continuous popularization of electronic facilities and the increasing requirements for the green environment, the development of lead-free ceramics is more in line with policy orientation and market demand. Among the lead-free dielectric materials, antiferroelectric sodium niobate attracts much attention because of its low price of raw materials and high breakdown field strength (Eb). However, its relatively high remanent polarization results in extremely significant energy loss. This drawback largely limits its effective application in practical application scenarios. In this study, La3⁺ and Bi3⁺ were used to substitute for the A-site, and Mg2⁺ and Ta5⁺ were used to substitute for the B-site to enhance the relaxation behavior. On this basis, the linear dielectric CaTiO₃ was added to improve the insulation of the ceramics. By inducing polar nanoregions (PNRs) to reduce the remanent polarization strength of the ceramics, (1-x)[0.9NaNbO3-0.1(La0.3Bi0.7Mg2/3Ta1/3)O3]-xCaTiO3 (x = 0.05、0.10、0.15、0.20) ceramics were successfully prepared. The results showed that with the increase of CaTiO3 content, the overall trend of the activation energy of the ceramics increased, and the difficulty of carrier migration increased. As a result, the breakdown field strength was significantly improved, rising from the original 350 kV/cm to 470 kV/cm. When x = 0.15, the 0.15CT ceramic achieved a high effective energy storage Wrec = 4.02 J/cm3 and energy storage efficiency ƞ = 87% under 470 kV/cm. Furthermore, this work exhibited outstanding temperature stability and an ultrafast charge–discharge rate (t0.9) of 21 ns. This research provides a new idea for the development of future high-performance capacitors.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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