High-Performance VA-MoS$_{2}$/GO Heterostructure-Based Sensor for In-Situ Soil Moisture Sensing

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Letters Pub Date : 2025-02-24 DOI:10.1109/LSENS.2025.3545267

Prajjwal Shukla;Rahul Gond;Brajesh Rawat

{"title":"High-Performance VA-MoS$_{2}$/GO Heterostructure-Based Sensor for In-Situ Soil Moisture Sensing","authors":"Prajjwal Shukla;Rahul Gond;Brajesh Rawat","doi":"10.1109/LSENS.2025.3545267","DOIUrl":null,"url":null,"abstract":"This letter presents a vertically aligned (VA)-MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>/graphene oxide (GO) heterostructure-based resistive sensor designed for high-performance soil moisture monitoring. The sensing film is fabricated using chemical vapor deposition to grow VA-MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> nanoflakes, followed by a spin coating of a colloidal GO solution. The sensor achieves a response of approximately 8.4% at 20% relative humidity (RH) and 41.18% at 80% RH, which demonstrates a broad detection range with high sensitivity. It also exhibits excellent stability, repeatability, and fast response and recovery times. In soil moisture measurement experiments, the sensor shows % responses of around 64.3, 139.8, and 160.67 for black soil with moisture contents of 5.9%, 16.2%, and 19.3%, respectively. With its wide sensing range, linear response, reliable performance, and cost-effective and scalable fabrication process, the VA-MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>/GO heterostructure holds great promise for next-generation soil moisture monitoring applications.","PeriodicalId":13014,"journal":{"name":"IEEE Sensors Letters","volume":"9 4","pages":"1-4"},"PeriodicalIF":2.2000,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10902190/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This letter presents a vertically aligned (VA)-MoS

$_{2}$

/graphene oxide (GO) heterostructure-based resistive sensor designed for high-performance soil moisture monitoring. The sensing film is fabricated using chemical vapor deposition to grow VA-MoS

$_{2}$

nanoflakes, followed by a spin coating of a colloidal GO solution. The sensor achieves a response of approximately 8.4% at 20% relative humidity (RH) and 41.18% at 80% RH, which demonstrates a broad detection range with high sensitivity. It also exhibits excellent stability, repeatability, and fast response and recovery times. In soil moisture measurement experiments, the sensor shows % responses of around 64.3, 139.8, and 160.67 for black soil with moisture contents of 5.9%, 16.2%, and 19.3%, respectively. With its wide sensing range, linear response, reliable performance, and cost-effective and scalable fabrication process, the VA-MoS

$_{2}$

/GO heterostructure holds great promise for next-generation soil moisture monitoring applications.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊