Highly Efficient Room-Temperature Nonvolatile Magnetization Switching in 2D Van Der Waals Ferromagnet Fe3GaTe2.

Abstract

The ability to manipulate magnetic states through low currents is crucial for next-generation spintronics. Two-dimensional (2D) magnetic van der Waals (vdW) materials have attracted widespread attention due to their huge spin-orbit torque (SOT) effects. However, the relatively low Curie temperature (T_C) of most known 2D ferromagnets limits their applications above room temperature. Therefore, the effective manipulation of the magnetic state at room temperature and the integration of multiple storage units remain a challenge. Here, we investigate the fundamental magnetism and nonlocal manipulation phenomena of the room-temperature vdW material Fe₃GaTe₂ (FGaT) using magneto-optical Kerr effect measurement technology, leading to the successful construction of low-power room-temperature nonvolatile magnetic switches and efficient room-temperature magneto-optical memory devices (MOMD). Notably, the power consumption of the room-temperature magnetization switch and the current density of the MOMD are as low as 5.12 × 10¹¹ W/m³ and 5 × 10⁴ A/cm², respectively. These findings provide solutions for the control and integration of next-generation vdW high-performance spintronic devices.