Exploring two-photon absorption and optical limiting properties of melt-grown 2,4-dinitroaniline (DNAN) single crystal under nanosecond pulsed laser excitation

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mohamad Asikali Abdul Hakkim, Rajesh Paulraj, T. C. Sabari Girisun
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Abstract

An organic nonlinear optical single crystal of 2,4-dinitroaniline (DNAN) was successfully grown using the vertical Bridgman method for the first time. Differential thermal analysis revealed that DNAN has a melting point of 180 °C and a freezing point of 170 °C, indicating its thermal phase transition behavior. Single crystal X-ray diffraction analysis confirmed that the title compound crystallizes in the monoclinic system with space group P21/c. FT-Raman spectroscopy confirmed the retention of DNAN’s functional groups during the melt-to-crystal transformation. TG-DTA revealed that DNAN is thermally stable up to 190 °C and decomposition occurring at 300 °C. Vickers microhardness testing revealed good mechanical stability of DNAN exhibiting a reverse size indentation effect and classifying it as a soft material based on Mayer’s plot. Photoconductivity studies demonstrated that DNAN exhibits negative photoconductivity with ohmic behavior. UV-visible analysis revealed 60% transmittance in the 500-1000 nm range, with a cut-off wavelength at 486 nm. The optical band gap was determined to be 2.52 eV using Tauc’s plot. Photoluminescence analysis showed fluorescence emission at 513 nm under 350 nm excitation. Z-scan analysis using a 9 ns pulsed Nd:YAG laser at 532 nm revealed reverse saturation absorption. The material exhibited a nonlinear absorption coefficient of 1.38 × 10–10 m/W and an optical limiting threshold of 2.24 GW/m2, confirming its potential for optical limiting applications. Hirshfeld surface mapping highlighted intermolecular interactions contributing to nonlinearity and crystal stability. The 2D fingerprint plots revealed that O-H interactions (41.3%) are the most significant contributors to crystal packing.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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