{"title":"Probing structural and electrical properties of Ca2SnO4 with sintering temperature","authors":"Mohit Upadhyay, Shail Upadhyay","doi":"10.1007/s10854-025-14532-5","DOIUrl":null,"url":null,"abstract":"<div><p>This study used the solid-state reaction method to prepare a series of Ca<sub>2</sub>SnO<sub>4</sub> ceramics of the CaO–SnO<sub>2</sub> system in the 1300–1500 °C temperature range. The effect of sintering temperature on the phase composition, unit cell, pore densification, thermal stability, dielectric properties, and DC conductivity has been studied. Further, we have studied dielectric and electrical properties in the radio frequency range (1 KHz–2 MHz) as a function of temperature (100–600 °C). It was observed that the dielectric constant has a maximum contribution of interfacial polarization. The variation in the dielectric constant value (14.26–34.88) is small as compared to the dielectric loss/dissipation factor (0.04–10.97) at 1 kHz frequency as a function of sintering temperature. The activation energy for DC conduction for the sample sintered at 1300 °C was found to be 0.88 eV, whereas for the sample sintered at 1400 °C, it was found to be 0.74 eV. The measured activation energy lies within the expected range for the movement of oxygen ion vacancies in ceramic oxides. Therefore, the decrease in activation energy observed at elevated sintering temperatures is linked to the higher concentration of oxygen vacancies. Negligible thermal expansion up to 1500 °C makes Ca<sub>2</sub>SnO<sub>4</sub> a potential candidate for low-cost substrate applications. The oxide can also be useful for thermally stable capacitors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14532-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study used the solid-state reaction method to prepare a series of Ca2SnO4 ceramics of the CaO–SnO2 system in the 1300–1500 °C temperature range. The effect of sintering temperature on the phase composition, unit cell, pore densification, thermal stability, dielectric properties, and DC conductivity has been studied. Further, we have studied dielectric and electrical properties in the radio frequency range (1 KHz–2 MHz) as a function of temperature (100–600 °C). It was observed that the dielectric constant has a maximum contribution of interfacial polarization. The variation in the dielectric constant value (14.26–34.88) is small as compared to the dielectric loss/dissipation factor (0.04–10.97) at 1 kHz frequency as a function of sintering temperature. The activation energy for DC conduction for the sample sintered at 1300 °C was found to be 0.88 eV, whereas for the sample sintered at 1400 °C, it was found to be 0.74 eV. The measured activation energy lies within the expected range for the movement of oxygen ion vacancies in ceramic oxides. Therefore, the decrease in activation energy observed at elevated sintering temperatures is linked to the higher concentration of oxygen vacancies. Negligible thermal expansion up to 1500 °C makes Ca2SnO4 a potential candidate for low-cost substrate applications. The oxide can also be useful for thermally stable capacitors.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.