Ahmed Kandeel;Minkyu Kim;Amir Shahin;Peter De Heyn;Chih-Kuo Neil Tseng;Javad Rahimi Vaskasi;Yosuke Shimura;Maumita Chakrabarti;Dimitrios Velenis;Dries Van Thourhout;Filippo Ferraro;Yoojin Ban;Joris Van Campenhout
{"title":"RF Equivalent Circuit Model for GeSi Quantum Confined Stark Effect Electro-Absorption Modulators","authors":"Ahmed Kandeel;Minkyu Kim;Amir Shahin;Peter De Heyn;Chih-Kuo Neil Tseng;Javad Rahimi Vaskasi;Yosuke Shimura;Maumita Chakrabarti;Dimitrios Velenis;Dries Van Thourhout;Filippo Ferraro;Yoojin Ban;Joris Van Campenhout","doi":"10.1109/LPT.2025.3549943","DOIUrl":null,"url":null,"abstract":"We present an RF equivalent circuit model for GeSi quantum confined stark effect (QCSE) electro-absorption modulator (EAM) integrated in a 300 mm Si photonics platform. The model incorporates two key components: the first captures the contributions from interconnects and bondpads, while the second represents the electrical and optical characteristics of the modulator. The model is validated by fitting it to measured S11 parameters across various EAM lengths under different bias conditions. The derived circuit parameters are subsequently employed to simulate the electro-optic S21 response, successfully estimating the EAM 3dB bandwidth in a good agreement with the measured small-signal modulation response. Additionally, deeper insights about the physical interpretation of the S11 data are obtained by converting the S11 to the impedance (Z) domain. Our model facilitates the analysis of EAM performance under high-speed operation, identifying the limiting factors for further speed enhancement.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 7","pages":"421-424"},"PeriodicalIF":2.3000,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10921720/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We present an RF equivalent circuit model for GeSi quantum confined stark effect (QCSE) electro-absorption modulator (EAM) integrated in a 300 mm Si photonics platform. The model incorporates two key components: the first captures the contributions from interconnects and bondpads, while the second represents the electrical and optical characteristics of the modulator. The model is validated by fitting it to measured S11 parameters across various EAM lengths under different bias conditions. The derived circuit parameters are subsequently employed to simulate the electro-optic S21 response, successfully estimating the EAM 3dB bandwidth in a good agreement with the measured small-signal modulation response. Additionally, deeper insights about the physical interpretation of the S11 data are obtained by converting the S11 to the impedance (Z) domain. Our model facilitates the analysis of EAM performance under high-speed operation, identifying the limiting factors for further speed enhancement.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.