Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate

IF 37.2 1区 材料科学 Q1 CHEMISTRY, PHYSICAL
Seokho Moon, Odongo Francis Ngome Okello, Adrien Rousseau, Chang-Won Choi, Youngjae Kim, Yunjae Park, Jiye Kim, Jaewon Kim, Minhyuk Kim, Pierre Valvin, Jaehee Cho, Kenji Watanabe, Takashi Taniguchi, Hu Young Jeong, Giorgia Fugallo, Wilfried Desrat, Feng Ding, JaeDong Lee, Bernard Gil, Guillaume Cassabois, Si-Young Choi, Jong Kyu Kim
{"title":"Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate","authors":"Seokho Moon, Odongo Francis Ngome Okello, Adrien Rousseau, Chang-Won Choi, Youngjae Kim, Yunjae Park, Jiye Kim, Jaewon Kim, Minhyuk Kim, Pierre Valvin, Jaehee Cho, Kenji Watanabe, Takashi Taniguchi, Hu Young Jeong, Giorgia Fugallo, Wilfried Desrat, Feng Ding, JaeDong Lee, Bernard Gil, Guillaume Cassabois, Si-Young Choi, Jong Kyu Kim","doi":"10.1038/s41563-025-02173-2","DOIUrl":null,"url":null,"abstract":"<p>The stacking sequence of two-dimensional hexagonal boron nitride (hBN) is a critical factor that determines its polytypes and its distinct physical properties. Although most hBN layers adopt the thermodynamically stable AA′ stacking sequence, achieving alternative stacking configurations has remained a long-standing challenge. Here we demonstrate the scalable synthesis of hBN featuring unprecedented AA stacking, where atomic monolayers align along the <i>c</i> axis without any translation or rotation. This previously considered thermodynamically unfavourable hBN polytype is achieved through epitaxial growth on a two-inch single-crystalline gallium nitride wafer, using a metal–organic chemical vapour deposition technique. Comprehensive structural and optical characterizations, complemented by theoretical modelling, evidence the formation of AA-stacked multilayer hBN and reveal that hBN nucleation on the vicinal gallium nitride surface drives the unidirectional alignment of layers. Here electron doping plays a central role in stabilizing the AA stacking configuration. Our findings provide further insights into the scalable synthesis of engineered hBN polytypes, characterized by unique properties such as large optical nonlinearity.</p>","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"20 1","pages":""},"PeriodicalIF":37.2000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1038/s41563-025-02173-2","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

The stacking sequence of two-dimensional hexagonal boron nitride (hBN) is a critical factor that determines its polytypes and its distinct physical properties. Although most hBN layers adopt the thermodynamically stable AA′ stacking sequence, achieving alternative stacking configurations has remained a long-standing challenge. Here we demonstrate the scalable synthesis of hBN featuring unprecedented AA stacking, where atomic monolayers align along the c axis without any translation or rotation. This previously considered thermodynamically unfavourable hBN polytype is achieved through epitaxial growth on a two-inch single-crystalline gallium nitride wafer, using a metal–organic chemical vapour deposition technique. Comprehensive structural and optical characterizations, complemented by theoretical modelling, evidence the formation of AA-stacked multilayer hBN and reveal that hBN nucleation on the vicinal gallium nitride surface drives the unidirectional alignment of layers. Here electron doping plays a central role in stabilizing the AA stacking configuration. Our findings provide further insights into the scalable synthesis of engineered hBN polytypes, characterized by unique properties such as large optical nonlinearity.

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来源期刊
Nature Materials
Nature Materials 工程技术-材料科学:综合
CiteScore
62.20
自引率
0.70%
发文量
221
审稿时长
3.2 months
期刊介绍: Nature Materials is a monthly multi-disciplinary journal aimed at bringing together cutting-edge research across the entire spectrum of materials science and engineering. It covers all applied and fundamental aspects of the synthesis/processing, structure/composition, properties, and performance of materials. The journal recognizes that materials research has an increasing impact on classical disciplines such as physics, chemistry, and biology. Additionally, Nature Materials provides a forum for the development of a common identity among materials scientists and encourages interdisciplinary collaboration. It takes an integrated and balanced approach to all areas of materials research, fostering the exchange of ideas between scientists involved in different disciplines. Nature Materials is an invaluable resource for scientists in academia and industry who are active in discovering and developing materials and materials-related concepts. It offers engaging and informative papers of exceptional significance and quality, with the aim of influencing the development of society in the future.
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