The influence of Zr/Ti variation and defect dipoles on the piezoelectric properties of PMS-PZT ceramics

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-19 DOI:10.1007/s10854-025-14577-6

Rong Li, Zhaoyu Zhou, Zhen Shen, Yi Li, Xiang Xia, Xiumei Shi, Huimin Hao

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引用次数: 0

Abstract

The piezoelectric properties of Pb(Mn_1/3Sb_2/3)_0.05Zr_xTi_yO₃(PMS-PZT) ceramics were systematically investigated by varying the Zr/Ti ratio and analyzing the role of defect dipoles in the microstructure and electrical properties. Experimental results reveal that adjusting the Zr/Ti ratio affects the grain size, oxygen vacancy concentration, and ferroelectric domain structure of the ceramics, thereby modulating the piezoelectric constant (d₃₃), mechanical quality factor (Q_m), and dielectric loss (tanδ) of the material. Significantly, the PMS-PZT ceramics with Zr/Ti of 47.5/47.5 show excellent temperature stability: the PMS-PZT ceramics retain more than 86% of their maximum piezoelectric constants at temperatures around 270 °C, and have loss tangent (tanδ) of less than 0.3% Furthermore, a weakening of the defect dipole pinning effect was observed, leading to a significant increase in the remanent polarization of the material. The variation of the current-electric field profile and Polarization–Electric field hysteresis loop with temperature is illustrated from the point of view of the ferroelectric domain switching.

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通过改变 Zr/Ti 比，系统研究了 Pb(Mn1/3Sb2/3)0.05ZrxTiyO3(PMS-PZT)陶瓷的压电特性，并分析了缺陷偶极子在微结构和电特性中的作用。实验结果表明，调整 Zr/Ti 比会影响陶瓷的晶粒尺寸、氧空位浓度和铁电畴结构，从而调节材料的压电常数 (d33)、机械品质因数 (Qm) 和介电损耗 (tanδ)。值得注意的是，Zr/Ti 为 47.5/47.5 的 PMS-PZT 陶瓷显示出卓越的温度稳定性：PMS-PZT 陶瓷在 270 °C 左右的温度下仍能保持其最大压电常数的 86% 以上，并且损耗正切（tanδ）小于 0.3%。从铁电场畴切换的角度说明了电流-电场曲线和极化-电场滞后环随温度的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.