Meng-Chen Shih, Shaun Tan, Yongli Lu, Tim Kodalle, Do-Kyoung Lee, Yifan Dong, Bryon W. Larson, Soyeon Park, Ruiqi Zhang, Matthias J. Grotevent, Tara Sverko, Hua Zhu, Yu-Kuan Lin, Carolin M. Sutter-Fella, Kai Zhu, Matthew C. Beard, Vladimir Bulović, Moungi G. Bawendi
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引用次数: 0
Abstract
Interface engineering plays a critical role in advancing the performance of perovskite solar cells. As such, 2D/3D perovskite heterostructures are of particular interest due to their optoelectrical properties and their further potential improvements. However, for conventional solution-processed 2D perovskites grown on an underlying 3D perovskite, the reaction stoichiometry is normally unbalanced with excess precursors. Moreover, the formed 2D perovskite is impure, leading to unfavorable energy band alignment at the interface. Here a simple method is presented that solves both issues simultaneously. The 2D formation reaction is taken first to completion, fully consuming excess PbI2. Then, isopropanol is utilized to remove excess organic ligands, control the 2D perovskite thickness, and obtain a phase-pure, n = 2, 2D perovskite. The outcome is a pristine (without residual 2D precursors) and phase-pure 2D perovskite heterostructure with improved surface passivation and charge carrier extraction compared to the conventional solution process. PSCs incorporating this treatment demonstrate a notable improvement in both stability and power conversion efficiency, with negligible hysteresis, compared to the conventional process.
期刊介绍:
Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.