Effect of graphene quantum dot concentration on p-toluenesulfonic acid-doped polyaniline–graphene quantum dot nanocomposites: chemical, optical, and electrical characterization for benzo[def]phenanthrene detection

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mahnoush Beygisangchin, Jaroon Jakmunee, Suraya Abdul Rashid, Suhaidi Shafie, Songpon Saetang
{"title":"Effect of graphene quantum dot concentration on p-toluenesulfonic acid-doped polyaniline–graphene quantum dot nanocomposites: chemical, optical, and electrical characterization for benzo[def]phenanthrene detection","authors":"Mahnoush Beygisangchin,&nbsp;Jaroon Jakmunee,&nbsp;Suraya Abdul Rashid,&nbsp;Suhaidi Shafie,&nbsp;Songpon Saetang","doi":"10.1007/s11082-025-08122-2","DOIUrl":null,"url":null,"abstract":"<div><p>Monitoring of benzo[def]phenanthrene as a toxic component is essential for environmental assessment because of its adverse impact on human health and ecological systems. P-Toluenesulfonic acid-doped polyaniline (PANI) and PANI-graphene quantum dot (PANI-GQD) nanocomposites were fabricated by incorporating graphene quantum dot (GQD) concentrations between 100 and 500 ppm through oxidative chemical polymerization of aniline under acidic conditions at ambient temperature. The materials were analysed using Fourier transform infrared (FT-IR), field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), thermogravimetry analysis (TGA), UV–visible and photoluminescence (PL) spectroscopy, and electrical conductivity measurements. Key findings included significant shifts in FT-IR peaks (C=N stretching from 1651 to 1694 cm⁻<sup>1</sup>) and an increase in the AB/AP ratio from 0.27 to 0.333, indicating enhanced sp<sup>2</sup> hybridization and improved electrical conductivity. XRD analysis showed improved molecular ordering in PANI-GQD nanocomposites. FE-SEM revealed changes in morphology from flat layers to spherical and flaky mixtures with increasing GQD concentrations. Film thickness increased from 13.52 μm (PANI-GQD-1) to 30.07 μm (PANI-GQD-5). The PANI-GQD-3 nanocomposite exhibited the lowest bandgap (2.39 eV) and the highest PL intensity because of enhanced energy transfer between PANI and GQD. Electrical conductivity decreased with increasing GQD concentration, with PANI-GQD-5 showing 2.17 (Ω cm)<sup>–1</sup>. PANI-GQD-3 successfully detected benzo[def]phenanthrene at concentrations ranging from 0.001 mol L⁻<sup>1</sup> to 10 × 10⁻⁹ mol L⁻<sup>1</sup> with a limit of detection of 1.5 × 10⁻⁹ mol L⁻<sup>1</sup> through gas chromatography. Results demonstrated the potential of PANI-GQD nanocomposites for sensor and biosensor applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08122-2","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Monitoring of benzo[def]phenanthrene as a toxic component is essential for environmental assessment because of its adverse impact on human health and ecological systems. P-Toluenesulfonic acid-doped polyaniline (PANI) and PANI-graphene quantum dot (PANI-GQD) nanocomposites were fabricated by incorporating graphene quantum dot (GQD) concentrations between 100 and 500 ppm through oxidative chemical polymerization of aniline under acidic conditions at ambient temperature. The materials were analysed using Fourier transform infrared (FT-IR), field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), thermogravimetry analysis (TGA), UV–visible and photoluminescence (PL) spectroscopy, and electrical conductivity measurements. Key findings included significant shifts in FT-IR peaks (C=N stretching from 1651 to 1694 cm⁻1) and an increase in the AB/AP ratio from 0.27 to 0.333, indicating enhanced sp2 hybridization and improved electrical conductivity. XRD analysis showed improved molecular ordering in PANI-GQD nanocomposites. FE-SEM revealed changes in morphology from flat layers to spherical and flaky mixtures with increasing GQD concentrations. Film thickness increased from 13.52 μm (PANI-GQD-1) to 30.07 μm (PANI-GQD-5). The PANI-GQD-3 nanocomposite exhibited the lowest bandgap (2.39 eV) and the highest PL intensity because of enhanced energy transfer between PANI and GQD. Electrical conductivity decreased with increasing GQD concentration, with PANI-GQD-5 showing 2.17 (Ω cm)–1. PANI-GQD-3 successfully detected benzo[def]phenanthrene at concentrations ranging from 0.001 mol L⁻1 to 10 × 10⁻⁹ mol L⁻1 with a limit of detection of 1.5 × 10⁻⁹ mol L⁻1 through gas chromatography. Results demonstrated the potential of PANI-GQD nanocomposites for sensor and biosensor applications.

石墨烯量子点浓度对对甲苯磺酸掺杂聚苯胺-石墨烯量子点纳米复合材料的影响:苯并[def]菲检测的化学、光学和电学表征
由于苯并[def]菲对人类健康和生态系统的不利影响,对其作为一种有毒成分的监测对于环境评价至关重要。将石墨烯量子点(GQD)掺入浓度为100 ~ 500 ppm的苯胺中,在酸性条件下对苯胺进行氧化化学聚合,制备了对甲苯磺酸掺杂聚苯胺(PANI)和聚苯胺-石墨烯量子点(PANI-GQD)纳米复合材料。采用傅里叶变换红外(FT-IR)、场发射扫描电镜(FE-SEM)、x射线衍射(XRD)、热重分析(TGA)、紫外可见光致发光(PL)光谱和电导率测量对材料进行了分析。主要发现包括FT-IR峰的显著变化(C=N从1651 cm延伸到1694 cm - 1)和AB/AP比从0.27增加到0.333,表明sp2杂交增强和电导率提高。XRD分析表明,聚苯胺- gqd纳米复合材料的分子有序性得到改善。FE-SEM显示,随着GQD浓度的增加,其形貌从扁平层变为球形和片状混合物。膜厚从13.52 μm (PANI-GQD-1)增加到30.07 μm (PANI-GQD-5)。PANI-GQD-3纳米复合材料具有最低的带隙(2.39 eV)和最高的PL强度,这是因为PANI和GQD之间的能量传递增强了。电导率随GQD浓度的增加而降低,PANI-GQD-5的电导率为2.17 (Ω cm) -1。PANI-GQD-3通过气相色谱法成功地检测出了浓度在0.001 mol L - 1到10 × 10⁻9 mol L - 1之间的苯并菲,检测限为1.5 × 10⁻9 mol L - 1。结果证明了聚苯胺- gqd纳米复合材料在传感器和生物传感器方面的应用潜力。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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