Dual- and triple- hetero-atom-doped carbon dots as novel additives for the engineering of defects passivation to boost performance of perovskite solar cells

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Çisem Kırbıyık Kurukavak, Mütahire Tok, Merve Yurdakul, Mahmut Kuş
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引用次数: 0

Abstract

Methylammonium lead iodide (MAPbI3)-based perovskite solar cells (PSCs) offer highly efficient photovoltaics. However, several disadvantages such as poor stability and possibility of defect formation reducing film quality have restricted its commercialization. In this work, we reported the synthesis of dual- and triple-hetero-atom-doped carbon quantum dots (CQDs) via hydrothermal method and their effect of use as additive on the performance of PSCs. The boron (B) and phosphorous (P)-doped CQDs (B,P-CQDs), sulphur (S) and P-doped CQDs (S,P-CQDs), and B, S, and P-doped CQDs (B,S,P-CQDs) additives were described. Since these CQDs have many functional groups including hydroxyl (–OH), they can easily interact with Pb ions leading to the formation of PbO, as well as interaction with methyl ammonium ions. A reduced halide vacancy density and an increased nucleation energy of perovskite enhance crystal sizes and charge transfer. The passivation of surface defects reduces non-radiative recombination and ion migration, which plays an important role in photodegradation of the MAPbI3 films. Herein, the introduction of S,P-CQDs improved power conversion efficiency (PCE) from 10 to 15% and current density (Jsc) from 14.4 to 23.6 mA cm−2. PSCs added with dual- and triple-hetero-atom-doped CQDs showed narrower efficiency distribution in comparison to the control devices.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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