Bi-doped cobalt ferrite nanoparticles for electromagnetic interference (EMI) shielding applications

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-17 DOI:10.1007/s10854-025-14554-z

Rahul Kalia, Ankush Chauhan, Rohit Jasrotia, Muhammad Farzik Ijaz, Khalid Mujassam Batoo, Ritesh Verma

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引用次数: 0

Abstract

Herein, we synthesized bismuth (Bi)-doped CoFe₂O₄ nanoparticles using the sol–gel auto-combustion method. X-ray diffraction pattern confirmed the formation of a cubic spinel structure in all samples where crystallite size ranged between 37.03 and 30.03 nm. The lattice parameter ranged between 8.393 and 8.409 Å except for the composition, x = 0.1. Fourier transform infrared spectra revealed the presence of octahedral and tetrahedral vibrational bands of 480–473 cm⁻¹ and 605–588 cm⁻¹, respectively. The Scanning Electron Microscopy and Transmission Electron Microscopy revealed the formation of irregular grains. Energy-dispersive X-ray spectra validated the chemical purity of all the samples. The magnetic studies revealed an increase in saturation magnetization from 54.828 to 79.713 emu/g with the increase in doping concentration due to the spin canting effect. The microwave properties showed a decrease in magnetic loss from 0.198 to 0.132 with an increase in Bi content, whereas dielectric loss increased from 0.242 to 0.422. EMI shielding analysis showed an increase in the shielding effect due to reflection from 9.398 to 10.373 dB with increasing doping concentration. Thus, the prepared samples paved a way for the application of Bi-doped cobalt ferrite in EMI shielding with improved magnetic and electric properties at high frequency.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.