Effect of Low-Dose Irradiation and Subsequent Isochronous Annealing on the Current-Voltage Characteristics of Silicon Carbide-Based Surface-Barrier Diodes

IF 0.5 Q4 PHYSICS, CONDENSED MATTER

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2025-03-17 DOI:10.1134/S1027451024702239

A. M. Strel’chuk, V. V. Kozlovski, G. A. Oganesyan

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Abstract

A study was conducted on the effect of low-dose (~10¹⁶ cm^–2) irradiation with electrons with an energy of 0.9 MeV and subsequent isochronous annealing at temperatures up to 550°C on the current-voltage characteristics of commercial rectifier diodes based on 4H-SiC with a doping level of (3–7) × 10¹⁵ cm^–3. The previously established effect of increasing series resistance R_s of diodes under irradiation, the numerical value of the threshold dose of irradiation, and the effect of the spread of the value of R_s of identical diodes at the same dose of radiation have been confirmed. For the first time, isochronous annealing (without passing current during annealing) was performed at temperatures up to 550°C, significantly exceeding the maximum operating temperatures of the diodes. It has been shown that starting from temperatures ≥200°C the annealing of defects is observed, which is expressed in a decrease in the value of R_s at room temperature down to pre-irradiation values. Annealing also leads to a decrease in the reverse breakdown current.

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低剂量辐照及后续等时退火对碳化硅基表面势垒二极管电流-电压特性的影响

研究了能量为0.9 MeV的低剂量（~1016 cm-2）辐照和550℃等时退火对掺杂水平为（3-7）× 1015 cm-3的4H-SiC商用整流二极管电流-电压特性的影响。证实了以往建立的辐照下二极管串联电阻Rs增大的效应、辐照阈值剂量的数值以及相同辐照剂量下相同二极管串联电阻Rs值扩散的效应。首次在高达550°C的温度下进行了等时退火（退火过程中不通过电流），大大超过了二极管的最高工作温度。结果表明，从≥200℃开始，观察到缺陷的退火，表现为室温下的Rs值下降到辐照前的值。退火也导致反向击穿电流的减小。

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来源期刊

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques PHYSICS, CONDENSED MATTER-

CiteScore

0.90

自引率

25.00%

发文量

144

审稿时长

3-8 weeks

期刊介绍： Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.