Effect of Low-Dose Irradiation and Subsequent Isochronous Annealing on the Current-Voltage Characteristics of Silicon Carbide-Based Surface-Barrier Diodes

IF 0.5 Q4 PHYSICS, CONDENSED MATTER

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2025-03-17 DOI:10.1134/S1027451024702239

A. M. Strel’chuk, V. V. Kozlovski, G. A. Oganesyan

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Abstract

A study was conducted on the effect of low-dose (~10¹⁶ cm^–2) irradiation with electrons with an energy of 0.9 MeV and subsequent isochronous annealing at temperatures up to 550°C on the current-voltage characteristics of commercial rectifier diodes based on 4H-SiC with a doping level of (3–7) × 10¹⁵ cm^–3. The previously established effect of increasing series resistance R_s of diodes under irradiation, the numerical value of the threshold dose of irradiation, and the effect of the spread of the value of R_s of identical diodes at the same dose of radiation have been confirmed. For the first time, isochronous annealing (without passing current during annealing) was performed at temperatures up to 550°C, significantly exceeding the maximum operating temperatures of the diodes. It has been shown that starting from temperatures ≥200°C the annealing of defects is observed, which is expressed in a decrease in the value of R_s at room temperature down to pre-irradiation values. Annealing also leads to a decrease in the reverse breakdown current.

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来源期刊

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques PHYSICS, CONDENSED MATTER-

CiteScore

0.90

自引率

25.00%

发文量

144

审稿时长

3-8 weeks

期刊介绍： Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.