Vacuum Annealing of Cr–SiС(4H) Schottky Diodes

IF 0.5 Q4 PHYSICS, CONDENSED MATTER

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2025-03-17 DOI:10.1134/S1027451024702240

A. M. Strel’chuk, E. V. Kalinina

引用次数: 0

Abstract

The effect of isochronous annealing in vacuum at temperatures of 100–400°C on the forward and reverse current-voltage characteristics of Cr–SiC(4H) Schottky diodes is studied. Diodes of different sizes are manufactured using the same technology based on one lightly doped (~4 × 10¹⁴ cm^–3) epitaxial layer. The current-voltage characteristics are close to ideal in all cases, but their significant spread before annealing, a decrease in the spread, and a shift to the low-voltage region as a result of annealing at 400°C were found. It is assumed that the main diode is in all cases is shunted by a parasitic diode, the barrier height of which is reduced as a result of annealing.

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Cr-SiС （4H）肖特基二极管的真空退火

研究了100-400℃真空同步退火对Cr-SiC （4H）肖特基二极管正反向电流电压特性的影响。不同尺寸的二极管采用相同的技术，基于一个轻掺杂（~4 × 1014 cm-3）外延层。在所有情况下，电流-电压特性都接近理想，但在400°C退火时，发现它们在退火前有明显的扩展，扩展减小，并向低压区移动。假设主二极管在所有情况下都由寄生二极管分流，寄生二极管的势垒高度由于退火而降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques PHYSICS, CONDENSED MATTER-

CiteScore

0.90

自引率

25.00%

发文量

144

审稿时长

3-8 weeks

期刊介绍： Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.