{"title":"High Holding Voltage SCR Devices With 150-krad(Si) TID Irradiation Tolerance for ESD Protection","authors":"Yujie Liu;Xiaonian Liu;Xiangliang Jin","doi":"10.1109/TNS.2025.3533214","DOIUrl":null,"url":null,"abstract":"In high-voltage (HV) integrated circuits (ICs), electrostatic discharge (ESD) has long been a critical reliability issue, particularly in space applications operating in radiation environments. The impact of ionizing radiation on the electrical characteristics of ESD protection devices cannot be overstated. This article investigates high holding voltage silicon-controlled rectifier (HHVSCR) devices using technology computer-aided design (TCAD) and transmission line pulse (TLP) testing systems. The HHVSCR is fabricated using 0.18-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula> m bipolar-CMOS-[double-diffused metal-oxide-semiconductor (DMOS)] (BCD) technology. TLP test results indicate a holding voltage of 20.73 V for the HHVSCR, with a human body model (HBM) protection level of 19 kV. Additionally, <inline-formula> <tex-math>$\\gamma $ </tex-math></inline-formula>-ray irradiation experiments demonstrate minimal degradation in ESD performance for the HHVSCR even under total-ionizing-dose (TID) irradiation of 150 krad(Si), maintaining leakage current at nA levels. Compared to existing HV ESD protection devices, the HHVSCR offers superior area efficiency, high TID tolerance, and strong latchup immunity for 12-V ICs. These features make it an excellent candidate for HV ESD protection in space applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"816-824"},"PeriodicalIF":1.9000,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10851327/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In high-voltage (HV) integrated circuits (ICs), electrostatic discharge (ESD) has long been a critical reliability issue, particularly in space applications operating in radiation environments. The impact of ionizing radiation on the electrical characteristics of ESD protection devices cannot be overstated. This article investigates high holding voltage silicon-controlled rectifier (HHVSCR) devices using technology computer-aided design (TCAD) and transmission line pulse (TLP) testing systems. The HHVSCR is fabricated using 0.18-$\mu $ m bipolar-CMOS-[double-diffused metal-oxide-semiconductor (DMOS)] (BCD) technology. TLP test results indicate a holding voltage of 20.73 V for the HHVSCR, with a human body model (HBM) protection level of 19 kV. Additionally, $\gamma $ -ray irradiation experiments demonstrate minimal degradation in ESD performance for the HHVSCR even under total-ionizing-dose (TID) irradiation of 150 krad(Si), maintaining leakage current at nA levels. Compared to existing HV ESD protection devices, the HHVSCR offers superior area efficiency, high TID tolerance, and strong latchup immunity for 12-V ICs. These features make it an excellent candidate for HV ESD protection in space applications.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.