25-GBd 850-nm VCSEL for an Extended Temperature Range

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2025-03-03 DOI:10.1109/LPT.2025.3547156

H. D. Kaimre;Alexander Grabowski;Johan Gustavsson;Anders Larsson

引用次数: 0

Abstract

We investigate the performance of a 25 Gbaud 850 nm vertical-cavity surface-emitting laser (VCSEL) with reduced temperature dependence from −40 to 125 °C. The VCSEL design implements chirped quantum wells (QWs) with different compositions to broaden the gain spectrum and achieve sufficient performance over the entire temperature range at constant bias current and modulation voltage. A

$\mathrm {6~\mu {\mathrm {m}} }$

oxide aperture diameter VCSEL supports data transmission at 25 Gb/s NRZ from −40 to 125 °C with 8 mA bias current and 640 mV modulation voltage. The temperature dependencies of basic performance parameters are also compared to those of a conventional VCSEL with identical QWs.

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来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.