Bulk Damage Effects in Neutron Irradiated Single- and Dual-Layer 150-nm CMOS SPADs

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nuclear Science Pub Date : 2025-01-15 DOI:10.1109/TNS.2025.3530240

F. Shojaei;P. Brogi;G.-F. Brogi;S. Giroletti;P. S. Marrocchesi;J. Minga;Lucio Pancheri;L. Ratti;G. Torilla;C. Vacchi

{"title":"Bulk Damage Effects in Neutron Irradiated Single- and Dual-Layer 150-nm CMOS SPADs","authors":"F. Shojaei;P. Brogi;G.-F. Brogi;S. Giroletti;P. S. Marrocchesi;J. Minga;Lucio Pancheri;L. Ratti;G. Torilla;C. Vacchi","doi":"10.1109/TNS.2025.3530240","DOIUrl":null,"url":null,"abstract":"Single- and dual-layer arrays of single-photon avalanche diodes (SPADs) fabricated in a 150-nm CMOS technology have been irradiated with neutrons up to a fluence of <inline-formula> <tex-math>$4.29 \\times 10 ^{10}~1$ </tex-math></inline-formula>-MeV neutron equivalent cm−2. Neutron irradiation is found to induce a notable rise in the dark count rate (DCR) noise of single-layer chips. The dual-layer configuration is demonstrated to be more robust, showing a comparatively smaller DCR degradation. DCR and breakdown voltage measurements have been performed at various temperatures, ranging from - 40°C to 40°C, both before and after irradiation. While the breakdown voltage is not significantly affected by neutron damage, the average activation energy of the defects responsible for DCR is found to decrease to about 0.2 eV after irradiation. Eventually, a model based on the nonionizing energy loss (NIEL) hypothesis and taking into account damage annealing with time is proposed, providing an accurate estimate of the DCR increase with fluence.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"908-918"},"PeriodicalIF":1.9000,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10843285/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Single- and dual-layer arrays of single-photon avalanche diodes (SPADs) fabricated in a 150-nm CMOS technology have been irradiated with neutrons up to a fluence of

$4.29 \times 10 ^{10}~1$

-MeV neutron equivalent cm−2. Neutron irradiation is found to induce a notable rise in the dark count rate (DCR) noise of single-layer chips. The dual-layer configuration is demonstrated to be more robust, showing a comparatively smaller DCR degradation. DCR and breakdown voltage measurements have been performed at various temperatures, ranging from - 40°C to 40°C, both before and after irradiation. While the breakdown voltage is not significantly affected by neutron damage, the average activation energy of the defects responsible for DCR is found to decrease to about 0.2 eV after irradiation. Eventually, a model based on the nonionizing energy loss (NIEL) hypothesis and taking into account damage annealing with time is proposed, providing an accurate estimate of the DCR increase with fluence.

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来源期刊

IEEE Transactions on Nuclear Science 工程技术-工程：电子与电气

CiteScore

3.70

自引率

27.80%

发文量

314

审稿时长

6.2 months

期刊介绍： The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.