Comment on “Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide”

Abstract

A three-terminal memtransistor utilizing monocrystalline molybdenum disulfide (MoS₂) as the channel material and semimetal source/drain electrode has been reported by Yang et al. (ACS Nano 2024, 18, 6936–6945). The article attributes the memory characteristics to charge trapping and detrapping at the interface between the HfO₂ gate oxide and MoS₂. Additionally, multiple memory states were achieved by applying different gate pulses, highlighting the device’s high potential for neuromorphic computing applications. According to the article, these behaviors stem from space charge-limited current (SCLC) and trap-filled limit (TFL) mechanisms. However, our in-depth analysis of the reported current–voltage characteristics indicates that these models are somewhat insufficient and inappropriate. This work offers an alternative explanation for the observed results and proposes a more accurate working model with sound physical justifications. The different physical mechanisms derived from this study are expected to significantly impact the further development and improvement of the proposed memtransistors.