{"title":"Investigation of structural, magnetic, and electromagnetic properties of bismuth and zinc co-doped magnesium ferrite nanoparticles","authors":"Ankush Chauhan, Rohit Duglet, Garima Rana, Subha Krishna Rao, Khalid M. Alotaibi, Krishan Kumar Yadav, Vishal Dutta, Ritesh Verma","doi":"10.1007/s10854-025-14517-4","DOIUrl":null,"url":null,"abstract":"<div><p>Herein, we investigated the structural, microstructural, optical, magnetic, dielectric, electrochemical and electromagnetic properties of zinc and bismuth co-doped magnesium nanoferrites. The crystallite sizes varied between 19.68 nm and 26.00 nm, whereas lattice parameters and other structural parameters also changed due to the co-doping. Scanning Electron Microscopy (SEM) micrographs showed the flake-like morphology with homogeneous distribution of grains and the grain size ranges from 2.59 to 4.42 μm. UV–Visible spectroscopy showed the increase in bandgap energy from 1.57 to 1.67 eV with co-doping. Electrochemical analysis suggested improved charge/discharge capacity and cycling stability with co-doping. The prepared samples exhibited low dielectric and magnetic loss tangents, moderate relative permittivity, and permeability, rendering them suitable for X-band antennas. The combined effect of Bi and Zn doping resulted in enhanced performance, allowing for the development of novel antenna designs and applications at high frequencies within the 8.2–12.4 GHz range, with greater functionality and efficiency. Variation of doping concentrations was seen in the studies of saturation magnetization, coercivity, and remanence. Doping enhances magnetic anisotropy, which allows for adjustable stability in magnetic orientations, rendering them well suited for multifunctional applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14517-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Herein, we investigated the structural, microstructural, optical, magnetic, dielectric, electrochemical and electromagnetic properties of zinc and bismuth co-doped magnesium nanoferrites. The crystallite sizes varied between 19.68 nm and 26.00 nm, whereas lattice parameters and other structural parameters also changed due to the co-doping. Scanning Electron Microscopy (SEM) micrographs showed the flake-like morphology with homogeneous distribution of grains and the grain size ranges from 2.59 to 4.42 μm. UV–Visible spectroscopy showed the increase in bandgap energy from 1.57 to 1.67 eV with co-doping. Electrochemical analysis suggested improved charge/discharge capacity and cycling stability with co-doping. The prepared samples exhibited low dielectric and magnetic loss tangents, moderate relative permittivity, and permeability, rendering them suitable for X-band antennas. The combined effect of Bi and Zn doping resulted in enhanced performance, allowing for the development of novel antenna designs and applications at high frequencies within the 8.2–12.4 GHz range, with greater functionality and efficiency. Variation of doping concentrations was seen in the studies of saturation magnetization, coercivity, and remanence. Doping enhances magnetic anisotropy, which allows for adjustable stability in magnetic orientations, rendering them well suited for multifunctional applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.