Radiation-induced Y2O3:Eu phosphor: thermoluminescence characterization and trapping parameter investigations

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yash D. Narad, Yatish R. Parauha, Naumov G. Nikolay, S. J. Dhoble
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引用次数: 0

Abstract

In this study, a series of Y2O3:Eu phosphors with varying concentrations of europium (Eu) were synthesized using the solid-state reaction method. The prepared materials underwent comprehensive characterization through multiple techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FT-IR), and thermoluminescence (TL) analysis. The XRD data were subjected to Rietveld refinement to investigate phase formation and structural properties. The thermoluminescent properties of the synthesized phosphors were assessed by subjecting the samples to different excitation sources, namely gamma rays, carbon ion beams, and oxygen ion beams. The results indicated that the Y2O3:Eu phosphor exposed to gamma rays exhibited the highest TL emission intensity when the Eu concentration was at 0.5 mol%. Conversely, the Y2O3:Eu phosphor exposed to carbon ion and oxygen ion beams displayed the highest TL emission intensity at a lower Eu concentration of 0.3 mol%. The analysis of traps involved in material was deconvolute the glow curves using Glow Curve Deconvolution (GCD) method. Additionally, trapping parameters were calculated using the GCD method, Chen's peak shape analysis, and the Initial Rise method. The findings of this investigation suggest that the prepared Y2O3:Eu phosphors hold significant potential for future research in dosimetry applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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