Synthesis of gallium (Ga) doped CdO/p-Si heterojunction and evaluation of junction parameters

IF 2.8 3区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Physica B-condensed Matter Pub Date : 2025-02-26 DOI:10.1016/j.physb.2025.417043

Abdur Rouf, Md Saifur Rahman, M. Mojibur Rahman, M.S.I. Sarker, M.K.R. Khan

{"title":"Synthesis of gallium (Ga) doped CdO/p-Si heterojunction and evaluation of junction parameters","authors":"Abdur Rouf, Md Saifur Rahman, M. Mojibur Rahman, M.S.I. Sarker, M.K.R. Khan","doi":"10.1016/j.physb.2025.417043","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, Gallium (Ga) doped CdO:Ga/<em>p</em>-Si heterojunction thin films are fabricated by spray pyrolysis technique. Optical study of CdO and CdO:Ga films showed that the transparency ranges from 78 % to 73 % in the near infrared (NIR) region. Both the CdO and CdO:Ga films are direct band gap semiconductor and the band gap widens for different thickness of thin films. The photoluminescence (PL) study of CdO:Ga films grown on <em>p</em>-Si substrate showed two emission peaks for excitation wavelength 400 nm which are due to exciton emission and the band to band transition. The carrier concentrations for the CdO and CdO:Ga are found of the order of 10<sup>20</sup> cm<sup>−3</sup> are the indication of <em>n</em>-type semiconductors. The rectifying diode behavior of the CdO:Ga/p-Si heterojunctions is confirmed by the Current-Voltage (I-V) characteristics. The good diode characteristics are revealed through the ideality factor and the C–V response of the heterostructures.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"706 ","pages":"Article 417043"},"PeriodicalIF":2.8000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452625001607","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

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Abstract

In this work, Gallium (Ga) doped CdO:Ga/p-Si heterojunction thin films are fabricated by spray pyrolysis technique. Optical study of CdO and CdO:Ga films showed that the transparency ranges from 78 % to 73 % in the near infrared (NIR) region. Both the CdO and CdO:Ga films are direct band gap semiconductor and the band gap widens for different thickness of thin films. The photoluminescence (PL) study of CdO:Ga films grown on p-Si substrate showed two emission peaks for excitation wavelength 400 nm which are due to exciton emission and the band to band transition. The carrier concentrations for the CdO and CdO:Ga are found of the order of 10²⁰ cm⁻³ are the indication of n-type semiconductors. The rectifying diode behavior of the CdO:Ga/p-Si heterojunctions is confirmed by the Current-Voltage (I-V) characteristics. The good diode characteristics are revealed through the ideality factor and the C–V response of the heterostructures.

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来源期刊

Physica B-condensed Matter 物理-物理：凝聚态物理

CiteScore

4.90

自引率

7.10%

发文量

703

审稿时长

44 days

期刊介绍： Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces