Tao Xu, Yuqiao Xie, Guoji Qiu, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi
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引用次数: 0
Abstract
Flash memory, a key element in embedded systems, necessitates high voltage for its operation, which is usually provided by charge pumps. This paper presents a programmable high efficiency charge pump system in 40 nm bulk CMOS technology powered from a 1.1 V supply. The proposed system integrates low-voltage MOS self-adaptive body-biased cross-coupled charge pumps and a high-voltage MOS self-adaptive body-biased cross-coupled charge pump with a doubler structure. The system adaptively activates the appropriate charge pump combination based on the current load, working in conjunction with a novel clock coupled voltage modulation circuit to achieve reduced power consumption and improved efficiency. The programmable high efficiency charge pump system can stabilize an output voltage of 6V at and 8V at under a 50 MHz clock. It achieves a peak efficiency of 64.04% at current load and occupies 0.145 mm in area.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
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