A 220-GHz Active Down-Conversion Mixer Based on 0.1-μm GaAs pHEMT Technology

0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI:10.1109/LMWT.2025.3525762

Xinli Han;Zhidong Lyu;Zhenbei Li;Jian Zhang;Changming Zhang;Cheng Guo;Xiang Zhu;Xianbin Yu

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Abstract

Terahertz (THz) mixers play a paramount role in high-speed communication and high-precision detection, yet are constrained by the typical need for advanced fabrication technologies and high-power THz local oscillator (LO) pump sources. This article presents the design and implementation of a single-ended subharmonic down-conversion mixer, leveraging a gate-pumped topology that operates with low LO input frequency and power requirements. The monolithic microwave integrated circuit (MMIC) of the mixer is fabricated in a 0.1-

$\mu $

m gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) technology and mounted to form a module. The mixer module exhibits a 3-dB radio frequency (RF) bandwidth (BW) of approximately 26 GHz, covering the range from 206 to 232 GHz. The performance supports the down-conversion of a 12-Gb/s optoelectronic THz communication system, offering a promising solution for cost-effective broadband THz converters.

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

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0.00%

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