High-performance photodetector applications of antimony doped indium sulfide thin films: Preparation, characterization and optical studies

Abstract

Herein we have described the preparation and UV photodetection properties of Antimony (Sb) doped Indium Sulfide (In₂S₃) thin films. The nebulizer spray pyrolysis method was used to deposit the undoped and Sb-doped In₂S₃ thin films onto glass substrates at 350 °C. The X-ray diffraction (XRD) analysis verified that all deposited films exhibited the cubic phase β-In₂S₃ structure, with the highest crystallinity observed in the 3 wt% Sb-doped film. The morphological analysis showed densely packed, relatively larger grains in the 3 wt% Sb-doped In₂S₃ thin film. From UV–Vis investigation, it was observed that Sb doping enhanced optical absorption. The key parameters of the photodetectors were determined by Current-Voltage and Current-Time measurements. Among the fabricated photodetectors, the 3 wt% Sb-doped In₂S₃ thin film exhibited remarkable performance, with calculated Responsivity (R) of 1.020 A/W, Detectivity (D∗) of 32.5 × 10¹⁰ Jones, and External Quantum Efficiency (EQE) of 346 %. The photo-response investigation provided rise and fall times of 0.43 s and 0.26 s respectively, for the 3 wt% Sb-doped sample. Additionally, the stability test demonstrates the durability, reliability and suitability of the photodetectors for long-term applications. The remarkable enhancement in photodetector properties achieved through Sb doping highlights the exceptional quality and potential of the 3 wt% Sb-doped In₂S₃ thin films, setting a new standard for performance in advanced UV detection applications.