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Taylor modeling and comparative research containing aspect-ratio dependent optimization of three-dimensional Hk superjunction MOSFETs

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-03-11 DOI:10.1016/j.mejo.2025.106623

Haimeng Huang, Zhentao Xiao, Zonghao Zhang, Chenxing Wang, Hongqiang Yang

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引用次数: 0

Abstract

A proposed optimization for high-k superjunction (H

k

-SJ) MOSFETs focuses on reducing specific ON-resistance (R

_{on,sp}

) in drift regions for three dimensional (3D) configurations in two cases (3DH

k

core and 3DH

k

shell) compared to 3D conventional SJ (C-SJ) and two dimensional Hk-SJ (2DH

k

). Under constraints of avalanche breakdown and critical depletion, the optimized R

_{on,sp}

and design parameters are determined. 3DH

k

core achieves the lowest R

_{on,sp}

of 12.43 m

Ω {cm}^{2}

at 800 V breakdown voltage (BV) for small aspect ratios (AR) due to the lower breakdown electric field (

E

-field) and impact ionization integral value, while 3DH

k

shell excels 3DH

k

core and 2DH

k

with a lower R

_{on,sp}

of 6.395 m

Ω {cm}^{2}

at large AR. Comparative research containing charge imbalance, temperature robustness, and switching characteristics is discussed after optimization. Taylor modeling for 3DH

k

shell optimization is also proposed. For further manufacturing guidance, fitting and boundary curves formulas are provided.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.