Advanced morphological characterization of N:ZnO thin films by RF magnetron sputtering and thermal annealing

Abstract

This study investigates the growth of nitrogen-doped zinc oxide (N: ZnO) thin films on silicon (Si) substrates using RF magnetron sputtering. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), were used to analyze the films. Atomic force microscopy (AFM) was employed to examine the grain size, distribution, and surface morphology. Results indicated that the annealing temperature significantly influenced surface texture, with a peak in roughness observed at 500 °C. They also contribute to the understanding of (N: ZnO) thin films’ stability and potential applications in optoelectronic devices.