AlInGaAs/InP 1.55-μm High-Index-Contrast Circular Beam Edge-Emitting Semiconductor Lasers

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2025-03-05 DOI:10.1109/LPT.2025.3548409

Jideofor A. H. Odoeze;Douglas C. Hall

引用次数: 0

Abstract

We experimentally demonstrate deep-etched 1550 nm AlInGaAs/InP single spatial mode high-index-contrast ridge waveguide (HIC RWG) edge-emitter semiconductor diode lasers operating with a non-astigmatic circular output beam, achieving a total output power of 23 mW cw and 31 mW pulsed for unbonded die. By selectively wet etching the AlInGaAs graded-index separate confinement heterostructure (GRINSCH) laterally inward from the sidewalls of a

$6.75~\mu $

m dry-etched ridge, the remaining

$2.67~\mu $

m active core yields a circular

$2.6~\mu $

$1/e^{2}$

width TEM00 Gaussian near field mode with ~30° FWHM far field divergence angle for both X and Y axes.

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来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.