4.1-dB Noise Figure and 20-dB Gain 92–115-GHz GaAs LNA With Hot Via Interconnections

Abstract

Advanced interconnect technologies are enabling solutions to obtain adequate low-noise amplifier performance even when the circuit is packaged and connected inside a receiver module. In this letter, we present suitable technology and design solutions of a gallium arsenide low-noise amplifier operating in the telecom W-band (92–115 GHz) featuring 20-dB gain and 4.1-dB noise figure accounting for through-the-substrate RF interconnect (hot vias) effects. To the best of the author’s knowledge, this is the first low-noise amplifier with hot via interconnections operating up to 115 GHz showing characterized data in terms of noise figure and third-order intermodulation.