Performance investigation of multilayer-layers solar cell based in ZnS-CZTSSe

Abstract

Researchers are investigating a range of materials to increase conversion efficiency, minimize the use of hazardous materials, and lower manufacturing costs because of the development of thin-film solar cells. To evaluate performance without wasting materials, one promising method is to modify solar cell materials, parameters, dimensions, and other factors using simulation tools. In this article, a mathematical model that incorporates both theoretical and experimental solar irradiance spectra is presented for thin-film solar cells based on copper zinc tin sulfo-selenide (CZTSSe). Four important performance metrics—open-circuit voltage, short-circuit current density, conversion efficiency, and fill factor—are assessed using the model, which is implemented using the Maple software. Considering different layer thicknesses, these metrics are examined for a ZnO/CdS/CZTSSe solar cell. Characteristic curves for current–voltage and power-voltage are also examined. The computations take into consideration the effects of surface dust on the diode as well as both ideal and actual representations of the solar cell. The findings show that adding a CdS buffer layer considerably enhances every performance metric and that, for every metric, the real diode model represents performance more accurately than the ideal model. The results also show that the cell has highest efficiency of 13.6.277 % at energy gap of CZTSSe (E₂ = 1.4 eV). In addition, results show that solar cell performance depredates as dust accumulate on its surface emphasizing the importance of cleaning the solar cell surface to maintain high performance.