Performance investigation of vertical TFET biosensor based on dual-source dual-channel trench gate

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2025-03-07 DOI:10.1016/j.micrna.2025.208129

Xingyu Wei, Hujun Jia, Linna Zhao, Qiyu Su, Weitao Cao, Wanli Yang, Zhen Cao, Yintang Yang

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引用次数: 0

Abstract

In this paper, a dielectric modulated Vertical TFET Biosensor Based on Dual-source Dual-channel Trench Gate is proposed. It is compared with an embedded source TFET (ES-TFET) biosensor by computer-aided design (TACD). Various aspects such as switching ratio, transconductance, saturation current and sensitivity are analyzed. It is concluded that the DSDC-TG-TFET electrical characteristics and sensitivity is superior to that of the ES-TFET. Upon K = 10, S_Ion = 1.86✕10⁷, S_Ion/Ioff = 1.84✕10⁷ and S_gm = 1.62✕10⁷.The characteristics mentioned are 2.09✕10⁵ times, 2.12✕10⁵ times and 2.33✕10⁵ times better than ES-TFET, respectively. In addition, this paper also perform noise analysis and linearity analysis for DSDC-TG-TFET. All device simulations were performed in TCAD environment with well-calibrated structure.

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来源期刊

Micro and Nanostructures

CiteScore

6.50

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0.00%

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