Investigating Carrier Dynamics Modulation in Nanoscale Multiple Quantum Wells through B+ Ion Implantation: Mechanisms and Performance Enhancement

Abstract

This study investigates the modification of carrier dynamics in nanoscale multiple quantum wells (MQWs) through B⁺ ion implantation, combining experimental and theoretical approaches to provide a comprehensive understanding of the impact on ultrafast optoelectronic responses. Using femtosecond time-resolved transient absorption (TA) spectroscopy, we examine the changes in carrier dynamics in both pristine and B⁺-implanted In_0.25Ga_0.75As/GaAs_0.9P_0.1 MQWs. Our results reveal significant modifications in the transient absorption spectra, with ion implantation reducing the excited-state absorption cross section (σ_ES) and leading to faster carrier recovery times. To further analyze these changes, we introduce a novel cascade rate equation model that incorporates two effective relaxation times, allowing for more accurate simulations of the experimental data. The model captures the complex interactions between various carrier states and provides a deeper understanding of the ion implantation effects on carrier trapping, recombination, and recovery processes. The comparison of experimental results and theoretical simulations demonstrates that ion implantation enhances ultrafast recovery times and modulates the carrier dynamics, offering a pathway for tailoring the optoelectronic properties of semiconductor materials. This work provides both a theoretical framework and experimental evidence for the design of next-generation ultrafast photonic devices with optimized carrier dynamics.