Junhui Gu;John Ma;Azhar Ahmed Chowdhury;Jianmin Guo;Xin Zhang;Jackson Ding;Hui Wang;Ken Chang
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引用次数: 0
Abstract
This article presents a high-density, single-ended non return to zero (NRZ) chiplet I/O implemented with 3 nm CMOS technology on a 2.5-D chip-on-wafer-on-substrate (CoWoS) interposer, accommodating trace lengths up to 2 mm. The design features 216 data lanes, each operating at 32 Gb/s. For the tested 2-mm trace, the channel insertion loss and crosstalk at the Nyquist frequency are −2.4 and −18.1 dB, respectively. The receiver (RX) includes real-time clock data recovery (CDR) and a bathtub monitor for each lane, optimizing sampling point adjustments and tracking phase drift across voltage and temperature variations. With all lanes active, the physical layer (PHY) achieves a density of 3.84 Tb/s/mm and operates with a power consumption of 0.36 pJ/bit. The worst-performing lane shows a 0.342 UI opening at a bit error rate (BER) of 1e−12, and an interpolated 0.331 UI opening at a BER of 1e−15 when running at 32 Gb/s. Additionally, results for 25 Gb/s operation are included as a lower power alternative. This article will discuss the design details and trade-offs of the transceiver.
期刊介绍:
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.