Quantification of Oxygen Vacancies in SrFe0.5Cr0.5O3−δ Thin Films: Correlating Lattice Expansion with Oxidation State Variability

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Mohammad Delower Hossain, Krishna Prasad Koirala, Le Wang*, Widitha S. Samarakoon, Mark E. Bowden, Zengqing Zhuo, Wanli Yang, Zhenxing Feng, Hua Zhou, Scott A. Chambers, Peter V. Sushko and Yingge Du*, 
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Abstract

Oxygen vacancies (VO), even in the dilute regime, can significantly impact the physical and chemical properties of complex oxides. It is however challenging to reliably detect and adequately quantify such defects in thin film samples where the VO concentration and distribution may further vary in response to interfacial strain. Here, we present a method to quantify VO concentrations in SrFe0.5Cr0.5O3−δ (SFCO) epitaxial thin films. Through coherent Bragg rod analysis, X-ray absorption spectroscopy, and theoretical modeling, we systematically correlate the c-axis lattice expansion detected in SFCO films with a VO concentration gradient. Our results reveal a nearly linear relationship between oxygen off-stoichiometry and out-of-plane lattice expansion in coherently strained SFCO films, with δ increasing from 0.32 to 0.52 and the lattice expanding by ∼1.0%. Moreover, a significant decrease in Cr oxidation state (from Cr5+ to Cr3+) is observed as the VO concentration increases, while the Fe oxidation state remains fixed at Fe3+. Our findings provide a reliable way to quantify oxygen stoichiometry in complex oxides, offering a pathway to design materials with precisely tailored structure–property relationships.

Abstract Image

SrFe0.5Cr0.5O3−δ薄膜中氧空位的定量:点阵膨胀与氧化态变异性的关系
氧空位(VO),即使在稀态下,也会显著影响复合氧化物的物理和化学性质。然而,在薄膜样品中可靠地检测和充分量化这些缺陷是具有挑战性的,因为VO的浓度和分布可能会随着界面应变的变化而进一步变化。在这里,我们提出了一种定量SrFe0.5Cr0.5O3−δ (SFCO)外延薄膜中VO浓度的方法。通过相干布拉格棒分析、x射线吸收光谱和理论建模,我们系统地将在SFCO薄膜中检测到的c轴晶格膨胀与VO浓度梯度联系起来。我们的研究结果表明,在相干应变SFCO薄膜中,氧的非化学测量与面外晶格膨胀之间存在近似线性关系,δ从0.32增加到0.52,晶格膨胀约1.0%。此外,随着VO浓度的增加,Cr的氧化态明显下降(从Cr5+到Cr3+),而Fe的氧化态保持在Fe3+。我们的发现提供了一种可靠的方法来量化复杂氧化物中的氧化学计量,为设计具有精确定制的结构-性能关系的材料提供了一条途径。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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