Application of n-Type or p-Type Dopants in Organic Photovoltaics.

Abstract

Compared to inorganic semiconductors, organic semiconductors (OSCs) exhibit lower permittivity and carrier mobility. This is primarily attributed to their weaker van der Waals forces and the significant structural and energetic disorder, ultimately impeding the commercial application of organic photovoltaics (OPVs). However, the introduction of n-type or p-type dopants offers a solution. These dopants effectively eliminate intrinsic traps in OSCs through trap-filling techniques, elevating carrier concentration and mobility, and consequently enhancing overall performance. This article delves into the systematic exploration of n-type and p-type dopant applications in OPVs. It encompasses doping mechanisms, commonly used n-type and p-type dopants, doping methodologies, the strategic distribution of dopants and the effect of doping on device performance. Ultimately, this concept strives to offer invaluable insights and guidance for advancing OPV performance via doping techniques.