A high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors

Abstract

Artificial nerves that are capable of sensing, processing and memory functions at bio-realistic frequencies are of potential use in nerve repair and brain–machine interfaces. n-type organic electrochemical transistors are a possible building block for artificial nerves, as their positive-potential-triggered potentiation behaviour can mimic that of biological cells. However, the devices are limited by weak ionic and electronic transport and storage properties, which leads to poor volatile and non-volatile performance and, in particular, a slow response. We describe a high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors. We fabricate a vertical n-type organic electrochemical transistor with a gradient-intermixed bicontinuous structure that simultaneously enhances the ionic and electronic transport and the ion storage. The transistor exhibits a volatile response of 27 μs, a 100-kHz non-volatile memory frequency and a long state-retention time. Our integrated artificial nerve, which contains vertical n-type and p-type organic electrochemical transistors, offers sensing, processing and memory functions in the high-frequency domain. We also show that the artificial nerve can be integrated into animal models with compromised neural functions and that it can mimic basic conditioned reflex behaviour. An artificial nerve that is based on a vertical n-type organic electrochemical transistor with a gradient-intermixed bicontinuous structure can operate at high frequencies and mimic basic conditioned reflex behaviour in animals.