A facile ultrasound-assisted synthesis and DFT evaluation of 3D hierarchical tin disulfide nanoflowers

Bayu Tri Murti , Athika Darumas Putri , Ma’rifatun Izati , Mazaya Sulaekhah , Ching-Yun Chen , Po-Kang Yang
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Abstract

Tin disulfide (SnS2), one of the 2D transition metal chalcogenide families, has recently received tremendous attention due to its stack geometry, precisely controllable structure and properties, tunable bandgap, and biocompatibility enabling a wide range of applications in sensors, supercapacitors, and flexible electronics. In this study, 3D hierarchical SnS2 nanoflower (f-SnS2) was synthesized via simple, versatile, and green ultrasound treatment at ambient temperature. The indirect ultrasound was applied with a frequency of 40 kHz. The product was examined with optical imaging, particle size and zeta potential analyzer, SEM, and EDX, resulting in homogenous material distribution and microstructural characteristics of as-synthesized f-SnS2. The chemical composition and crystallographic information of f-SnS2 were characterized by XRD, Raman spectroscopy, and HR-TEM. In addition, their electronic bandgap and active-site distribution were elucidated through DMol3-based density-functional calculations. These results demonstrated the successful synthesis of f-SnS2 in facile and reagent-less laboratory settings as well as the electrostatic potential distribution at edge-active sites. The Monte Carlo adsorption study of SnS2 towards toxic and pollutant gases (H2, CO2, and CO) revealed that the material has great potential for gas sensing applications.
三维层次二硫化锡纳米花的超声辅助合成及DFT评价
二硫化锡(SnS2)是二维过渡金属硫族化合物之一,由于其叠层几何形状、精确可控的结构和性能、可调的带隙和生物相容性,在传感器、超级电容器和柔性电子产品中得到了广泛的应用,近年来受到了广泛的关注。在本研究中,通过简单、通用、绿色的超声处理,在常温下合成了三维层次化SnS2纳米花(f-SnS2)。间接超声应用频率为40 kHz。通过光学成像、粒度和zeta电位分析仪、SEM和EDX对产物进行了表征,得到了均匀的材料分布和f-SnS2的微观结构特征。利用XRD、拉曼光谱和HR-TEM表征了f-SnS2的化学组成和晶体结构。此外,通过基于dmol3的密度泛函计算,阐明了它们的电子带隙和活性位点分布。这些结果证明了f-SnS2在简单和无试剂的实验室环境下成功合成,以及边缘活性位点的静电电位分布。SnS2对有毒和污染气体(H2、CO2和CO)的蒙特卡罗吸附研究表明,该材料具有很大的气敏应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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