Room-temperature ammonia gas sensor based on Ti-doped ZnO thin films prepared via wet chemical synthesis using drop casting technique

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-03-05 DOI:10.1016/j.sna.2025.116396

Sivaramakrishnan Subramanian , Karupputhevar Neyvasagam , S. Sathish kumar , V. Ganesh , Ramesh Ade

{"title":"Room-temperature ammonia gas sensor based on Ti-doped ZnO thin films prepared via wet chemical synthesis using drop casting technique","authors":"Sivaramakrishnan Subramanian , Karupputhevar Neyvasagam , S. Sathish kumar , V. Ganesh , Ramesh Ade","doi":"10.1016/j.sna.2025.116396","DOIUrl":null,"url":null,"abstract":"<div><div>This study investigates the preparation of pristine and ZnO: Ti thin films through drop casting technique, with titanium (Ti) concentrations of 1 %, 3 %, and 5 % by weight. The prepared samples were analyzed using powder X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence studies and gas sensing analysis. The powder XRD results confirmed that the ZnO:Ti thin films exhibited a hexagonal wurtzite structure. The lattice parameters and unit cell volumes were determined, and the film exhibited negligible microstrain. Surface morphology analysis revealed voids with interconnected network structures, which enhanced the surface adsorption of oxygen species and contributed to an improved gas sensing response for the ZnO:Ti thin film with 3 % Ti. According to UV-Vis spectroscopy, the optical band gap of the synthesized ZnO: Ti thin films ranged from 3.37 to 3.39 eV. Photoluminescence studies indicated that deep-level emissions in the visible region of the electromagnetic spectrum are attributed to defects, such as interstitials and vacant sites within the lattice. The gas sensing properties demonstrated a gas response of 74, with a response time of 10.4 s and a recovery time of 6.4 s for 250 ppm ammonia gas, indicating high gas response for the ZnO: Ti 3 % thin film. This film also exhibited remarkable selectivity towards ammonia and a linear response to ambient relative humidity. Repeatability and stability studies confirmed reliable sensing performance and good aging properties, making the 3 % Ti-doped ZnO film suitable for ammonia gas sensing applications.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"387 ","pages":"Article 116396"},"PeriodicalIF":4.1000,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S092442472500202X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This study investigates the preparation of pristine and ZnO: Ti thin films through drop casting technique, with titanium (Ti) concentrations of 1 %, 3 %, and 5 % by weight. The prepared samples were analyzed using powder X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence studies and gas sensing analysis. The powder XRD results confirmed that the ZnO:Ti thin films exhibited a hexagonal wurtzite structure. The lattice parameters and unit cell volumes were determined, and the film exhibited negligible microstrain. Surface morphology analysis revealed voids with interconnected network structures, which enhanced the surface adsorption of oxygen species and contributed to an improved gas sensing response for the ZnO:Ti thin film with 3 % Ti. According to UV-Vis spectroscopy, the optical band gap of the synthesized ZnO: Ti thin films ranged from 3.37 to 3.39 eV. Photoluminescence studies indicated that deep-level emissions in the visible region of the electromagnetic spectrum are attributed to defects, such as interstitials and vacant sites within the lattice. The gas sensing properties demonstrated a gas response of 74, with a response time of 10.4 s and a recovery time of 6.4 s for 250 ppm ammonia gas, indicating high gas response for the ZnO: Ti 3 % thin film. This film also exhibited remarkable selectivity towards ammonia and a linear response to ambient relative humidity. Repeatability and stability studies confirmed reliable sensing performance and good aging properties, making the 3 % Ti-doped ZnO film suitable for ammonia gas sensing applications.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...