{"title":"Analysis of Sheet Thickness and Gate Voltage Dependence of Electrical Characteristics for Nanosheet MOSFETs","authors":"Kosei Hosoda, Akira Hiroki","doi":"10.1002/ecj.12480","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>In this paper, we have analyzed sheet thickness and gate voltage dependence of electrical characteristics for nanosheet MOSFETs using a device simulation that takes quantum confinement effects into account. Since the sheet thickness of nanosheet MOSFETs decreases to several nanometers, the simulated on-current shows significant reduction compared to the on-current required in the device design due to the quantum confinement effect. We analyze the relative difference between the on-current required in the device design and the simulated on-current and propose a design guideline using the relative difference. In order to suppress the relative difference of the on-currents within 3%, the minimum sizes of the sheet thickness are 3.4, 4.5, and 5.5 nm at supply voltages of 0.70, 0.60, and 0.50 V, respectively.</p>\n </div>","PeriodicalId":50539,"journal":{"name":"Electronics and Communications in Japan","volume":"108 1","pages":""},"PeriodicalIF":0.5000,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics and Communications in Japan","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/ecj.12480","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we have analyzed sheet thickness and gate voltage dependence of electrical characteristics for nanosheet MOSFETs using a device simulation that takes quantum confinement effects into account. Since the sheet thickness of nanosheet MOSFETs decreases to several nanometers, the simulated on-current shows significant reduction compared to the on-current required in the device design due to the quantum confinement effect. We analyze the relative difference between the on-current required in the device design and the simulated on-current and propose a design guideline using the relative difference. In order to suppress the relative difference of the on-currents within 3%, the minimum sizes of the sheet thickness are 3.4, 4.5, and 5.5 nm at supply voltages of 0.70, 0.60, and 0.50 V, respectively.
期刊介绍：
Electronics and Communications in Japan (ECJ) publishes papers translated from the Transactions of the Institute of Electrical Engineers of Japan 12 times per year as an official journal of the Institute of Electrical Engineers of Japan (IEEJ). ECJ aims to provide world-class researches in highly diverse and sophisticated areas of Electrical and Electronic Engineering as well as in related disciplines with emphasis on electronic circuits, controls and communications. ECJ focuses on the following fields:
- Electronic theory and circuits,
- Control theory,
- Communications,
- Cryptography,
- Biomedical fields,
- Surveillance,
- Robotics,
- Sensors and actuators,
- Micromachines,
- Image analysis and signal analysis,
- New materials.
For works related to the science, technology, and applications of electric power, please refer to the sister journal Electrical Engineering in Japan (EEJ).
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