BeomSoo Kim, TaeWan Kim, Seungchan Seon, Okmin Park, Hyungyu Cho, Weon Ho Shin, Sang-il Kim
{"title":"Phase Formation Behavior and Thermoelectric Transport Properties of Solid Solution Composition Between SnTe and InTe","authors":"BeomSoo Kim, TaeWan Kim, Seungchan Seon, Okmin Park, Hyungyu Cho, Weon Ho Shin, Sang-il Kim","doi":"10.1007/s13391-024-00529-5","DOIUrl":null,"url":null,"abstract":"<div><p>Alloys based on SnTe have been widely studied for their eco-friendly characteristics and good electrical performance in the high-temperature range above 600 K. In this study, SnTe-InTe solid solution alloy compositions of Sn<sub>1 − x</sub>In<sub>x</sub>Te (<i>x</i> = 0, 0.2, 0.4, 0.6, 0.8, and 1.0) were investigated for their phase formation behavior and thermoelectric properties. A single cubic SnTe phase was formed in <i>x</i> ≤ 0.4 samples, while <i>x</i> = 0.6 and 0.8 samples formed multi-phase with a tetragonal InTe phase. The carrier mobility gradually decreased with increasing <i>x</i> in the single cubic phase region (<i>x</i> = 0-0.4), and a drastic reduction of 58% for <i>x</i> = 0.2 and 82% for <i>x</i> = 0.4, causing <i>S</i> and <i>σ</i> to decrease simultaneously compared to that of the pristine SnTe. Thus, the power factor gradually reduced to 0.06 mW/mK<sup>2</sup> for <i>x</i> = 0.4 compared to 1.57 mW/mK<sup>2</sup> for the pristine sample, as confirmed by the weighted mobility reduction behavior. The lattice thermal conductivity showed a gradual decrease in the simple cubic phase region, owing to the additional point defects formed by In substitution of Sn sites. Consequently, <i>zT</i> gradually decreased from 0.31 for the pristine to 0.02 for <i>x</i> = 0.4 sample due to the degradation of carrier transport properties, specifically Hall mobility, outweighing the total thermal conductivity reduction. The maximum <i>zT</i> value of 0.50 at 750 K was observed for InTe (<i>x</i> = 1.0). Additional analysis using the single-parabolic-band model indicated that <i>zT</i> enhancement through carrier concentration optimization was not feasible for the alloy samples.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"207 - 215"},"PeriodicalIF":2.1000,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-024-00529-5","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Alloys based on SnTe have been widely studied for their eco-friendly characteristics and good electrical performance in the high-temperature range above 600 K. In this study, SnTe-InTe solid solution alloy compositions of Sn1 − xInxTe (x = 0, 0.2, 0.4, 0.6, 0.8, and 1.0) were investigated for their phase formation behavior and thermoelectric properties. A single cubic SnTe phase was formed in x ≤ 0.4 samples, while x = 0.6 and 0.8 samples formed multi-phase with a tetragonal InTe phase. The carrier mobility gradually decreased with increasing x in the single cubic phase region (x = 0-0.4), and a drastic reduction of 58% for x = 0.2 and 82% for x = 0.4, causing S and σ to decrease simultaneously compared to that of the pristine SnTe. Thus, the power factor gradually reduced to 0.06 mW/mK2 for x = 0.4 compared to 1.57 mW/mK2 for the pristine sample, as confirmed by the weighted mobility reduction behavior. The lattice thermal conductivity showed a gradual decrease in the simple cubic phase region, owing to the additional point defects formed by In substitution of Sn sites. Consequently, zT gradually decreased from 0.31 for the pristine to 0.02 for x = 0.4 sample due to the degradation of carrier transport properties, specifically Hall mobility, outweighing the total thermal conductivity reduction. The maximum zT value of 0.50 at 750 K was observed for InTe (x = 1.0). Additional analysis using the single-parabolic-band model indicated that zT enhancement through carrier concentration optimization was not feasible for the alloy samples.
期刊介绍:
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.