Phase Formation Behavior and Thermoelectric Transport Properties of Solid Solution Composition Between SnTe and InTe

IF 2.6 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2024-11-16 DOI:10.1007/s13391-024-00529-5

BeomSoo Kim, TaeWan Kim, Seungchan Seon, Okmin Park, Hyungyu Cho, Weon Ho Shin, Sang-il Kim

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引用次数: 0

Abstract

Alloys based on SnTe have been widely studied for their eco-friendly characteristics and good electrical performance in the high-temperature range above 600 K. In this study, SnTe-InTe solid solution alloy compositions of Sn_1 − xIn_xTe (x = 0, 0.2, 0.4, 0.6, 0.8, and 1.0) were investigated for their phase formation behavior and thermoelectric properties. A single cubic SnTe phase was formed in x ≤ 0.4 samples, while x = 0.6 and 0.8 samples formed multi-phase with a tetragonal InTe phase. The carrier mobility gradually decreased with increasing x in the single cubic phase region (x = 0-0.4), and a drastic reduction of 58% for x = 0.2 and 82% for x = 0.4, causing S and σ to decrease simultaneously compared to that of the pristine SnTe. Thus, the power factor gradually reduced to 0.06 mW/mK² for x = 0.4 compared to 1.57 mW/mK² for the pristine sample, as confirmed by the weighted mobility reduction behavior. The lattice thermal conductivity showed a gradual decrease in the simple cubic phase region, owing to the additional point defects formed by In substitution of Sn sites. Consequently, zT gradually decreased from 0.31 for the pristine to 0.02 for x = 0.4 sample due to the degradation of carrier transport properties, specifically Hall mobility, outweighing the total thermal conductivity reduction. The maximum zT value of 0.50 at 750 K was observed for InTe (x = 1.0). Additional analysis using the single-parabolic-band model indicated that zT enhancement through carrier concentration optimization was not feasible for the alloy samples.

Graphical Abstract

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SnTe和InTe固溶组分的相形成行为和热电输运性质

SnTe基合金在600 K以上的高温范围内具有良好的电性能和环保特性，因此得到了广泛的研究。本文研究了Sn1−xInxTe （x = 0、0.2、0.4、0.6、0.8和1.0）的SnTe-InTe固溶体合金成分的相形成行为和热电性能。在x≤0.4样品中形成单一的立方SnTe相，而在x = 0.6和0.8样品中形成多相的四方InTe相。在单立方相区（x = 0-0.4），载流子迁移率随x的增加而逐渐降低，当x = 0.2时急剧下降58%，当x = 0.4时急剧下降82%，导致S和σ与原始SnTe相比同时降低。因此，当x = 0.4时，功率因数逐渐降低到0.06 mW/mK2，而原始样品的功率因数为1.57 mW/mK2，加权迁移率降低行为证实了这一点。晶格热导率在简单立方相区逐渐下降，这是由于in取代Sn位形成了额外的点缺陷。因此，zT从原始样品的0.31逐渐下降到x = 0.4样品的0.02，这是由于载流子输运性质的退化，特别是霍尔迁移率，超过了总导热系数的降低。InTe （x = 1.0）在750 K时zT最大值为0.50。利用单抛物带模型进一步分析表明，通过优化载流子浓度来增强合金样品的zT是不可行的。图形抽象

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.