Calculation of radiation hardness of chromium-compensated gallium arsenade sensors irradiated with 1–20 MeV beta particles

Abstract

The paper presents the calculation results of the charge carrier lifetime and charge collection efficiency of sensors based on chromium-compensated gallium arsenide irradiated with beta particles at the energy of 1 to 20 MeV. It is found that the charge collection efficiency decreases down to 1% of the initial value after the sensor irradiation up to doses of about 1 MGy. The thickness reduction to 100–150 μm improves the sensor radiation resistance up to 2 MGy. It is shown that calculation results are in agreement with the experimental data.