Preparation of High-Performance UV Photodetectors Based on Growing ZnO Nanowires via Focused Ion Beam Exposure

IF 4.3 2区 综合性期刊 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Jianxiang Liao;Cong Liu;Yandong Yang;Weiwei Zhong;Hui Xiao;Jiao Xu;Yuhang Liu;Dengji Guo;Xujin Wang
{"title":"Preparation of High-Performance UV Photodetectors Based on Growing ZnO Nanowires via Focused Ion Beam Exposure","authors":"Jianxiang Liao;Cong Liu;Yandong Yang;Weiwei Zhong;Hui Xiao;Jiao Xu;Yuhang Liu;Dengji Guo;Xujin Wang","doi":"10.1109/JSEN.2025.3531554","DOIUrl":null,"url":null,"abstract":"The precise patterning of micro–nano-scale photosensitive materials is crucial for the preparation of metal–semiconductor–metal (MSM)-type ultraviolet (UV) photodetectors and the integration of photodetector arrays in image sensors. However, current methods for positioning zinc oxide (ZnO) nanowires (NWs) are complex and lack sufficient accuracy. In this work, the growth of ZnO NWs at specific locations in a zinc acetate films using focused ion beam (FIB) exposure was conducted and observed. Four FIB exposure doses were employed to explore the ZnO NW growth characteristics and the influence on UV detecting performance. As the FIB exposure dose grew, the higher responsivity (R), specific detectivity (D*), and high ON/OFF ratios were measured. At an FIB exposure dose of <inline-formula> <tex-math>$1600~\\mu $ </tex-math></inline-formula>C/cm2, the UV photodetector exhibited the best performance, with an <sc>on/off</small> ratio of up to 17 445, a responsivity of 37.91 A/W, a specific detectivity of <inline-formula> <tex-math>$4.50\\times 10^{13}$ </tex-math></inline-formula> Jones, and an external quantum efficiency (EQE) of 12 879.01%. Additionally, the UV photodetector fabricated with a 1600-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>C/cm2 dose demonstrated a rapid response time of 10.17 s and a recovery time of 7.45 s. This study evaluates the influence of FIB exposure dose on ZnO NW growth and showcases the performance of UV photodetectors fabricated with different doses, providing new insights into ZnO NW growth and methods for optimizing the performance of ZnO NW-based UV photodetectors.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 5","pages":"8238-8245"},"PeriodicalIF":4.3000,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Journal","FirstCategoryId":"103","ListUrlMain":"https://ieeexplore.ieee.org/document/10855345/","RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The precise patterning of micro–nano-scale photosensitive materials is crucial for the preparation of metal–semiconductor–metal (MSM)-type ultraviolet (UV) photodetectors and the integration of photodetector arrays in image sensors. However, current methods for positioning zinc oxide (ZnO) nanowires (NWs) are complex and lack sufficient accuracy. In this work, the growth of ZnO NWs at specific locations in a zinc acetate films using focused ion beam (FIB) exposure was conducted and observed. Four FIB exposure doses were employed to explore the ZnO NW growth characteristics and the influence on UV detecting performance. As the FIB exposure dose grew, the higher responsivity (R), specific detectivity (D*), and high ON/OFF ratios were measured. At an FIB exposure dose of $1600~\mu $ C/cm2, the UV photodetector exhibited the best performance, with an on/off ratio of up to 17 445, a responsivity of 37.91 A/W, a specific detectivity of $4.50\times 10^{13}$ Jones, and an external quantum efficiency (EQE) of 12 879.01%. Additionally, the UV photodetector fabricated with a 1600- $\mu $ C/cm2 dose demonstrated a rapid response time of 10.17 s and a recovery time of 7.45 s. This study evaluates the influence of FIB exposure dose on ZnO NW growth and showcases the performance of UV photodetectors fabricated with different doses, providing new insights into ZnO NW growth and methods for optimizing the performance of ZnO NW-based UV photodetectors.
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Sensors Journal
IEEE Sensors Journal 工程技术-工程:电子与电气
CiteScore
7.70
自引率
14.00%
发文量
2058
审稿时长
5.2 months
期刊介绍: The fields of interest of the IEEE Sensors Journal are the theory, design , fabrication, manufacturing and applications of devices for sensing and transducing physical, chemical and biological phenomena, with emphasis on the electronics and physics aspect of sensors and integrated sensors-actuators. IEEE Sensors Journal deals with the following: -Sensor Phenomenology, Modelling, and Evaluation -Sensor Materials, Processing, and Fabrication -Chemical and Gas Sensors -Microfluidics and Biosensors -Optical Sensors -Physical Sensors: Temperature, Mechanical, Magnetic, and others -Acoustic and Ultrasonic Sensors -Sensor Packaging -Sensor Networks -Sensor Applications -Sensor Systems: Signals, Processing, and Interfaces -Actuators and Sensor Power Systems -Sensor Signal Processing for high precision and stability (amplification, filtering, linearization, modulation/demodulation) and under harsh conditions (EMC, radiation, humidity, temperature); energy consumption/harvesting -Sensor Data Processing (soft computing with sensor data, e.g., pattern recognition, machine learning, evolutionary computation; sensor data fusion, processing of wave e.g., electromagnetic and acoustic; and non-wave, e.g., chemical, gravity, particle, thermal, radiative and non-radiative sensor data, detection, estimation and classification based on sensor data) -Sensors in Industrial Practice
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信