Exploring dielectric and conductive behavior in indium-doped Se78−xTe20Sn2Inx (0 ≤ x ≤ 6) chalcogenide glasses

Abstract

An understanding of the conduction mechanism can be supported by the structural information expected to be revealed by studying the dielectric behavior and alternating current (AC) conduction of amorphous materials such as chalcogenide glasses. This script presents our recently synthesized multi-component glasses of the quaternary Se_78-xTe₂₀Sn₂In_x (0 ≤ x ≤ 6) system, representing our innovative work. We have specifically looked into the dielectric characteristics of these electronic materials. We have examined how the dielectric constant (\(\varepsilon^{\prime}\)), dielectric loss (\(\varepsilon^{\prime\prime}\)), and AC conductivity depend on temperature and frequency in the audible frequency range (0.1–500 kHz). A thorough investigation revealed that the Guintini model is followed by dielectric loss (\(\varepsilon^{\prime\prime}\)). AC conduction follows correlated barrier hopping (CBH), with bi-polaron hopping being the leading conduction mechanism. We have also determined the density of localized states by using the CBH model. The CBH model states that electron hopping occurs over the coulombic barrier height W and the distance R between adjacent sites. The Coulomb wells overlap and lower the effective barrier height from W_M to a value of W. We found a new correlation for explaining the barrier hopping. The regression coefficient (R²) for this correlation is 100%. Subsequent investigation reveals that variations in electronegativity explain the sequence of rising charged defect densities and reduce with atomization heat.