{"title":"A 4H–SiC Vibration Sensor With the Working Temperature up to 600 ∘C","authors":"Yu Yang;You Zhao;Lukang Wang;Yabing Wang;Yulong Zhao","doi":"10.1109/TIM.2025.3545532","DOIUrl":null,"url":null,"abstract":"High-temperature vibration sensors are critical in extreme environments such as aerospace, automotive, power generation, where common sensors fail due to excessive heat. This study introduces a vibration sensor that can withstand high temperatures up to <inline-formula> <tex-math>$600~^{\\circ }$ </tex-math></inline-formula>C based on the piezoresistive effect of N-type 4H-SiC. The sensor chip was designed by theoretical modeling and multiphysics simulation, and fabricated by combining micro-electronmechanical systems (MEMSs) technology and femtosecond laser etching. The sensor performance was extensively verified from <inline-formula> <tex-math>$25~^{\\circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$600~^{\\circ }$ </tex-math></inline-formula>C. The sensitivity of the sensor decreases from 0.153 mV/g at <inline-formula> <tex-math>$25~^{\\circ }$ </tex-math></inline-formula>C to 0.105 mV/g at <inline-formula> <tex-math>$600~^{\\circ }$ </tex-math></inline-formula>C with a temperature coefficient of −0.054% FS/°C at <inline-formula> <tex-math>$600~^{\\circ }$ </tex-math></inline-formula>C. The sensor’s sensitivity decreases essentially linearly with increasing temperature. Dynamic tests showed the sensor’s usable frequency is 0–590 Hz and the resonant frequency is 1179.85 Hz at <inline-formula> <tex-math>$25~^{\\circ }$ </tex-math></inline-formula>C while decreasing to 1156.76 Hz at <inline-formula> <tex-math>$600~^{\\circ }$ </tex-math></inline-formula>C. The designed sensor showed the reliability of high impact resistance up to 225% overload and random vibration. These findings suggest that the designed vibration sensor can be a promising alternative for high-temperature vibration monitoring.","PeriodicalId":13341,"journal":{"name":"IEEE Transactions on Instrumentation and Measurement","volume":"74 ","pages":"1-10"},"PeriodicalIF":5.6000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Instrumentation and Measurement","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10902487/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
High-temperature vibration sensors are critical in extreme environments such as aerospace, automotive, power generation, where common sensors fail due to excessive heat. This study introduces a vibration sensor that can withstand high temperatures up to $600~^{\circ }$ C based on the piezoresistive effect of N-type 4H-SiC. The sensor chip was designed by theoretical modeling and multiphysics simulation, and fabricated by combining micro-electronmechanical systems (MEMSs) technology and femtosecond laser etching. The sensor performance was extensively verified from $25~^{\circ }$ C to $600~^{\circ }$ C. The sensitivity of the sensor decreases from 0.153 mV/g at $25~^{\circ }$ C to 0.105 mV/g at $600~^{\circ }$ C with a temperature coefficient of −0.054% FS/°C at $600~^{\circ }$ C. The sensor’s sensitivity decreases essentially linearly with increasing temperature. Dynamic tests showed the sensor’s usable frequency is 0–590 Hz and the resonant frequency is 1179.85 Hz at $25~^{\circ }$ C while decreasing to 1156.76 Hz at $600~^{\circ }$ C. The designed sensor showed the reliability of high impact resistance up to 225% overload and random vibration. These findings suggest that the designed vibration sensor can be a promising alternative for high-temperature vibration monitoring.
期刊介绍:
Papers are sought that address innovative solutions to the development and use of electrical and electronic instruments and equipment to measure, monitor and/or record physical phenomena for the purpose of advancing measurement science, methods, functionality and applications. The scope of these papers may encompass: (1) theory, methodology, and practice of measurement; (2) design, development and evaluation of instrumentation and measurement systems and components used in generating, acquiring, conditioning and processing signals; (3) analysis, representation, display, and preservation of the information obtained from a set of measurements; and (4) scientific and technical support to establishment and maintenance of technical standards in the field of Instrumentation and Measurement.