Exploring GaAs/InGaAs/GaAs 2DEG Inter-Subband Scattering Coefficients of Light-Emitting Transistors

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2025-02-14 DOI:10.1109/LPT.2025.3542503

Lucas Yang;Ying-Tzu Chen;Shu-Wei Chang;Chao-Hsin Wu

引用次数: 0

Abstract

This letter explores the inter-subband scattering properties in n-p-n quantum well heterojunction bipolar light-emitting transistors (QW-HBLETs or LETs). We showed a steady-state method to extract the inter-subband transition coefficients and get around the difficulty of RF characterization by fitting the concentration ratios of unbounded and bounded electrons in the QW to get the inter-subband scattering coefficients. Our investigation revealed that the inter-subband scattering coefficients decreased with increasing temperature and Fermi level in the two-dimensional electron gas. Additionally, we compared the capture lifetimes and the escape lifetimes of LETs to confirm the necessity of the Fermi level-dependent scattering coefficients.

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来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.